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Infineon IRFB4229PBF
| 제조업체 | |
| 제조사 품번 | IRFB4229PBF |
| LCSC 번호 | C2653 |
| 포장 | TO-220AB |
| 고객 번호 | |
| 주요 제원 | MOSFET 250V 46A TO-220AB |
| 데이터시트 | Infineon IRFB4229PBF |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220AB | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 330W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.56nF | |
| Gate Charge(Qg) | 110nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220AB | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 330W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.56nF | |
| Gate Charge(Qg) | 110nC@10V |
개요
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
주요 특징
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W - 500w (Half-bridge)
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 1.6208 | $ 1.62 |
| 10+ | $ 1.3701 | $ 13.70 |
| 50+ | $ 1.0735 | $ 53.68 |
| 100+ | $ 0.9194 | $ 91.94 |
| 500+ | $ 0.849 | $ 424.50 |
| 1,000+ | $ 0.8195 | $ 819.50 |
표준 패키지50/Full Tube | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220AB | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 330W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.56nF | |
| Gate Charge(Qg) | 110nC@10V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220AB | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 330W | |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.56nF | |
| Gate Charge(Qg) | 110nC@10V |
개요
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
주요 특징
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W - 500w (Half-bridge)
C2653 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| FDP51N25 | onsemi | TO-220 | 64 | $ 2.0695 | ||
| GBS65060TOA | GOSEMICON | TO-220 | 35 | $ 3.4088 | ||
| NTP055N65S3H | onsemi | TO-220 | 269 | $ 2.4517 | ||
| H40N25 | Huixin | TO-220AB | 26 | $1.7329 $1.9691 | ||
| HSP044N25 | HUASHUO | TO-220 | 0 | $ 2.1202 | ||
| IXTP76N25TM | Littelfuse/IXYS | TO-220 | 0 | $ 4.2587 | ||
| IXTP76N25T | Littelfuse | TO-220-3 | 0 | $ 1.0878 | ||
| SIHP052N60EF-GE3 | VISHAY | TO-220AB | 0 | $ 4.5534 | ||
| FDP2710_SW82258 | onsemi | TO-220-3 | 0 | $ 2.2204 | ||
| IXTP50N25T | Littelfuse/IXYS | TO-220 | 0 | $ 4.4548 |