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MICROCHIP MV1N8168

Produttore
Cod. Prod.
MV1N8168
Cod. LCSC
C2634834
Imballo
Through Hole,D2xL4mm
Numero Cliente
Attr. chiave
70.1VC Clamp TVS DIODE Through Hole
Scheda TecnicaMICROCHIP MV1N8168
Parti alternative8
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 40.4583$ 40.46
200+$ 15.6566$ 3131.32
500+$ 15.1073$ 7553.65
1,000+$ 14.8357$ 14835.70
Package Standard100/Full Bag
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ProduttoreMICROCHIP
ImballoThrough Hole,D2xL4mm
Clamping Voltage70.1V
Operating Temperature-55℃~+175℃
Peak Pulse Current (Ipp)-
Peak Pulse Power Dissipation (Ppp)150W
Number of Channels1
Voltage - Breakdown48.5V
typeTVS
PolarityUnidirectional
Reverse Leakage Current (Ir)500nA
Reverse Stand-Off Voltage (Vrwm)43V

Descrizione

Traduzione AI

This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak “standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting.

Caratteristiche

Traduzione AI
  • High surge current and peak pulse power unidirectional protection for sensitive circ
  • Very low capacitance for high frequency or high baud rate applications.
  • Bidirectional capability with two devices in anti-parallel.
  • Triple-layer passivation.
  • Internal “Category 1” metallurgical bonds.
  • Voidless hermetically sealed glass package.
  • RoHS compliant versions are available.

Applicazioni

Traduzione AI
  • High reliability transient protection.
  • Extremely robust construction.
  • Working peak “standoff” voltage (VW M) from 6.8 to 170 volts.
  • Available as 150 W peak pulse power (PP P) at 10/1000 μs.
  • Lowest available capacitance for 150 W rated TVS.
  • ESD and EFT protection per IEC61000 - 4 - 2 and IEC61000 - 4 - 4 respectively.
  • Secondary lightning protection per select levels in IEC61000 - 4 - 5.
  • Flexible axial - leaded mounting terminals.
  • Nonsensitive to ESD per MIL - STD - 750 method 1020.
  • Inherently radiation hard as described in Microsemi MicroNote 050.

Parti alternative

MPNProduttoreImballaggioDisponibilitàPrezzo unitario
MQ1N8168MICROCHIPThrough Hole,D2xL4mm0$ 69.7386
MX1N8168MICROCHIPThrough Hole,D2xL4mm0$ 40.3272
MQ1N8167MICROCHIPThrough Hole,D2xL4mm0$ 36.6657
MX1N8167MICROCHIPThrough Hole,D2xL4mm0$ 40.3272
MV1N8167MICROCHIPThrough Hole,D2xL4mm0$ 38.1588
JAN1N6475MICROCHIPThrough Hole,D2xL4mm0$ 17.215
MV1N8169MICROCHIPThrough Hole,D2xL4mm0$ 38.1588
MX1N8169MICROCHIPThrough Hole,D2xL4mm0$ 40.3272