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Modelli EDAEasyEDA
ST L6388ED013TR
| Produttore | |
| Cod. Prod. | L6388ED013TR |
| Cod. LCSC | C23921 |
| Imballo | SOIC-8 |
| Numero Cliente | |
| Attr. chiave | High voltage high and low-side driver |
| Scheda Tecnica | ST L6388ED013TR |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Produttore | ST | |
| Imballo | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | 225ns | |
| High Level Delay Time | 160ns | |
| Quiescent Current | 350uA | |
| Input Logic Level - High | - | |
| Voltage - Supply | 3.3V~18V | |
| Operating Temperature | -45℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 650mA | |
| Rise Time | 70ns | |
| Fall Time | 40ns | |
| Features | Dead-time control;Interleaved conduction protection;Built-in bootstrap diode;Charge pump boost | |
| Current - Output High(IOH) | 400mA | |
| Load Type | MOSFET;IGBT |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Produttore | ST | |
| Imballo | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | 225ns | |
| High Level Delay Time | 160ns | |
| Quiescent Current | 350uA | |
| Input Logic Level - High | - | |
| Voltage - Supply | 3.3V~18V |
| Tipo | Descrizione | |
|---|---|---|
| Operating Temperature | -45℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 650mA | |
| Rise Time | 70ns | |
| Fall Time | 40ns | |
| Features | Dead-time control;Interleaved conduction protection;Built-in bootstrap diode;Charge pump boost | |
| Current - Output High(IOH) | 400mA | |
| Load Type | MOSFET;IGBT |
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Descrizione
Traduzione AI
The L6388E is a high voltage device, manufactured with the BCD “offline” technology. It has a driver structure that enables the driving of independent referenced N-channel Power MOSFETs or IGBTs. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.
Caratteristiche
Traduzione AI
- High voltage rail up to 600 V
- dV/dt immunity ±50 V/nsec in full temperature range
- Driver current capability: – 400 mA source, 650 mA sink
- Switching times 70/40 nsec rise/fall with 1 nF load
- 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
- Internal bootstrap diode
- Outputs in phase with inputs
- Deadtime and interlocking function
Disponibile: 1,960
1,960 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.6605 | $ 0.66 |
| 10+ | $ 0.5409 | $ 5.41 |
| 30+ | $ 0.4802 | $ 14.41 |
| 100+ | $ 0.4212 | $ 42.12 |
| 500+ | $ 0.3852 | $ 192.60 |
| 1,000+ | $ 0.3671 | $ 367.10 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Produttore | ST | |
| Imballo | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | 225ns | |
| High Level Delay Time | 160ns | |
| Quiescent Current | 350uA | |
| Input Logic Level - High | - | |
| Voltage - Supply | 3.3V~18V | |
| Operating Temperature | -45℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 650mA | |
| Rise Time | 70ns | |
| Fall Time | 40ns | |
| Features | Dead-time control;Interleaved conduction protection;Built-in bootstrap diode;Charge pump boost | |
| Current - Output High(IOH) | 400mA | |
| Load Type | MOSFET;IGBT |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Produttore | ST | |
| Imballo | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | 225ns | |
| High Level Delay Time | 160ns | |
| Quiescent Current | 350uA | |
| Input Logic Level - High | - | |
| Voltage - Supply | 3.3V~18V |
| Tipo | Descrizione | |
|---|---|---|
| Operating Temperature | -45℃~+125℃ | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 650mA | |
| Rise Time | 70ns | |
| Fall Time | 40ns | |
| Features | Dead-time control;Interleaved conduction protection;Built-in bootstrap diode;Charge pump boost | |
| Current - Output High(IOH) | 400mA | |
| Load Type | MOSFET;IGBT |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The L6388E is a high voltage device, manufactured with the BCD “offline” technology. It has a driver structure that enables the driving of independent referenced N-channel Power MOSFETs or IGBTs. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.
Caratteristiche
Traduzione AI
- High voltage rail up to 600 V
- dV/dt immunity ±50 V/nsec in full temperature range
- Driver current capability: – 400 mA source, 650 mA sink
- Switching times 70/40 nsec rise/fall with 1 nF load
- 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
- Internal bootstrap diode
- Outputs in phase with inputs
- Deadtime and interlocking function
C23921 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |