- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
SINO-IC SE3400
| Producent | SINO-ICAsian Brands |
| Nr części prod. | SE3400 |
| Nr LCSC | C238643 |
| Opak. | SOT-23-3 |
| Numer Klienta | |
| Klucz. cechy | MOSFET 30V 5.8A SOT-23-3 |
| Karta Katalogowa | SINO-IC SE3400 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 66pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Gate Charge(Qg) | 14nC@15V | |
| Vgs | ±12V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 66pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Gate Charge(Qg) | 14nC@15V | |
| Vgs | ±12V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Na stanie: 1,360
1,360 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0421 | $ 0.42 |
| 100+ | $ 0.0336 | $ 3.36 |
| 300+ | $ 0.0293 | $ 8.79 |
| 3,000+ | $ 0.0261 | $ 78.30 |
| 6,000+ | $ 0.0235 | $ 141.00 |
| 9,000+ | $ 0.0222 | $ 199.80 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 66pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Gate Charge(Qg) | 14nC@15V | |
| Vgs | ±12V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | SOT-23-3 | |
| Output Capacitance(Coss) | 66pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | - | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 823pF | |
| Gate Charge(Qg) | 14nC@15V | |
| Vgs | ±12V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
C238643 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |