NUVOTON KFC4B21320L
| Hersteller | NUVOTONAsian Brands |
| Herst.-Teilenr. | KFC4B21320L |
| LCSC-Nr. | C20106332 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 12V 4A 1.4V 900mW 48mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS |
| Datenblatt | NUVOTON KFC4B21320L |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NUVOTON | |
| Verp. | - | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 48mΩ@4.5V | |
| Gate Charge(Qg) | 3.5nC@4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NUVOTON | |
| Verp. | - | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 48mΩ@4.5V | |
| Gate Charge(Qg) | 3.5nC@4V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
Dual N-Channel MOSFET with Built-in Gate Resistors For Lithium-Ion Secondary Battery Protection Circuits
Merkmale
KI-Übersetzung
- Low source-to-source on-resistance: Rss(on) typical = 36 mΩ (VGS = 4.5 V)
- CSP (Chip Scale Package)
- RoHS compliant (EU RoHS / MSL: Level 1 compliant)
Anwendungen
KI-Übersetzung
- Motor drive - Inverters, converters - Photovoltaic, wind power generation - Induction heating equipment
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4815 | $ 0.48 |
| 200+ | $ 0.1929 | $ 38.58 |
| 500+ | $ 0.1869 | $ 93.45 |
| 1,000+ | $ 0.1838 | $ 183.80 |
Standardgehäuse20000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NUVOTON | |
| Verp. | - | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 48mΩ@4.5V | |
| Gate Charge(Qg) | 3.5nC@4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NUVOTON | |
| Verp. | - | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 900mW | |
| RDS(on) | 48mΩ@4.5V | |
| Gate Charge(Qg) | 3.5nC@4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Dual N-Channel MOSFET with Built-in Gate Resistors For Lithium-Ion Secondary Battery Protection Circuits
Merkmale
KI-Übersetzung
- Low source-to-source on-resistance: Rss(on) typical = 36 mΩ (VGS = 4.5 V)
- CSP (Chip Scale Package)
- RoHS compliant (EU RoHS / MSL: Level 1 compliant)
Anwendungen
KI-Übersetzung
- Motor drive - Inverters, converters - Photovoltaic, wind power generation - Induction heating equipment
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

