EPC EPC7007BC
| Hersteller | |
| Herst.-Teilenr. | EPC7007BC |
| LCSC-Nr. | C19952124 |
| Verp. | SMD-4P |
| Kundennummer | |
| Hauptmerkm. | 200V 18A 28mΩ@5V 2.5V SMD-4P RF FETs, MOSFETs |
| Datenblatt | EPC EPC7007BC |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | SMD-4P | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 28mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 7nC@5V | |
| Output Capacitance(Coss) | 360pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | SMD-4P | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 28mΩ@5V |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 7nC@5V | |
| Output Capacitance(Coss) | 360pF |
Beschreibung
EPC Space FSMD-B series enhanced gallium nitride (eGaN) power switching HEMTs are designed for critical applications in high-reliability or commercial satellite space environments. These devices feature extremely high electron mobility and low temperature coefficients, resulting in ultra-low on-resistance RDS(on). The lateral die structure achieves very low gate charge (QG) and extremely fast switching times. These characteristics enable higher power switching frequencies, leading to greater power density, higher efficiency, and more compact packaging.
Merkmale
- Low on-resistance RDS(on)
- Ultra-low gate charge QG for high efficiency
- Logic level
- Lightweight — 0.135 grams
- New compact hermetic package
- Radiation hardness up to 1000 krad
- Immune to single event effects (SEE) at linear energy transfer (LET) of 85 MeV/mg/cm² with drain-source voltage (VDS) up to 100% of rated breakdown voltage
- Low dose rate of 100 mRad/s
- Pre-irradiation specifications maintained
- Pre-irradiation specifications maintained at neutron fluence up to 1×10¹⁵ neutrons/cm²
Anwendungen
- Satellite and electronic equipment - Deep space probe - High-speed radiation-hardened DC-DC conversion - Radiation-hardened motor controller
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 325.3257 | $ 325.33 |
| 200+ | $ 305.5454 | $ 61109.08 |
| 500+ | $ 295.3345 | $ 147667.25 |
| 1,000+ | $ 290.2902 | $ 290290.20 |
Standardgehäuse1/Full Bag | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | SMD-4P | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 28mΩ@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 7nC@5V | |
| Output Capacitance(Coss) | 360pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Hersteller | EPC | |
| Verp. | SMD-4P | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| RDS(on) | 28mΩ@5V |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Input Capacitance(Ciss) | 900pF | |
| Gate Charge(Qg) | 7nC@5V | |
| Output Capacitance(Coss) | 360pF |
Beschreibung
EPC Space FSMD-B series enhanced gallium nitride (eGaN) power switching HEMTs are designed for critical applications in high-reliability or commercial satellite space environments. These devices feature extremely high electron mobility and low temperature coefficients, resulting in ultra-low on-resistance RDS(on). The lateral die structure achieves very low gate charge (QG) and extremely fast switching times. These characteristics enable higher power switching frequencies, leading to greater power density, higher efficiency, and more compact packaging.
Merkmale
- Low on-resistance RDS(on)
- Ultra-low gate charge QG for high efficiency
- Logic level
- Lightweight — 0.135 grams
- New compact hermetic package
- Radiation hardness up to 1000 krad
- Immune to single event effects (SEE) at linear energy transfer (LET) of 85 MeV/mg/cm² with drain-source voltage (VDS) up to 100% of rated breakdown voltage
- Low dose rate of 100 mRad/s
- Pre-irradiation specifications maintained
- Pre-irradiation specifications maintained at neutron fluence up to 1×10¹⁵ neutrons/cm²
Anwendungen
- Satellite and electronic equipment - Deep space probe - High-speed radiation-hardened DC-DC conversion - Radiation-hardened motor controller
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |