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Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi MUN5214T1G
| Producent | |
| Nr części prod. | MUN5214T1G |
| Nr LCSC | C176704 |
| Opak. | SC-70(SOT-323) |
| Numer Klienta | |
| Klucz. cechy | TRANS PREBIAS 50V SC-70(SOT-323) |
| Karta Katalogowa | onsemi MUN5214T1G |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70(SOT-323) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 140 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70(SOT-323) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 140 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Funkcje
Tłumaczenie AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Na stanie: 735
735 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1454 | $ 0.73 |
| 50+ | $ 0.1202 | $ 6.01 |
| 150+ | $ 0.1077 | $ 16.16 |
| 500+ | $ 0.0982 | $ 49.10 |
| 3,000+ | $ 0.0855 | $ 256.50 |
| 6,000+ | $ 0.0817 | $ 490.20 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70(SOT-323) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 140 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | SC-70(SOT-323) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 140 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 310mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Funkcje
Tłumaczenie AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C176704 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| NHDTC143ZUX | Nexperia | SOT-323 | 80 | $ 0.2191 | ||
| DTC114YUAQ | YANGJIE | SOT-323(SC-70) | 40 | $ 0.049 | ||
| DTC114YUAFRAT106 | ROHM | SOT-323 | 3,060 | $ 0.0429 | ||
| DTC114YUBHZGTL | ROHM | SC-85 | 10 | $ 0.1689 | ||
| DTC114YUA | CBI | SOT-323 | 7,300 | $ 0.0197 | ||
| SMUN5214T1G | onsemi | SC-70 | 0 | $ 0.1352 | ||
| SMUN5233T1G | onsemi | SC-70-3 | 0 | $ 0.0324 | ||
| MUN5216T1G | onsemi | SC-70-3 | 0 | $ 0.0347 | ||
| ADTC114YUAQ-7 | DIODES | SOT-323 | 0 | $ 0.0585 | ||
| NHDTC143ZTR | Nexperia | SC-70 | 0 | $ 0.0679 |