Winsok Semicon WSR200N08
| Produttore | Winsok SemiconAsian Brands |
| Cod. Prod. | WSR200N08 |
| Cod. LCSC | C148459 |
| Imballo | TO-220 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 80V 200A TO-220 |
| Scheda Tecnica | Winsok Semicon WSR200N08 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | TO-220 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.029nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 345W | |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.154nF | |
| Gate Charge(Qg) | 197nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | TO-220 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.029nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 345W | |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.154nF | |
| Gate Charge(Qg) | 197nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cel density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSR200N08 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Caratteristiche
Traduzione AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applicazioni
Traduzione AI
- Switching application
- Power Management for Inverter Systems
Disponibile: 56
56 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.207 | $ 1.21 |
| 10+ | $ 1.0712 | $ 10.71 |
| 50+ | $ 0.9973 | $ 49.87 |
| 100+ | $ 0.8404 | $ 84.04 |
Package Standard50/Full Tube | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | TO-220 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.029nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 345W | |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.154nF | |
| Gate Charge(Qg) | 197nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | TO-220 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.029nF | |
| Current - Continuous Drain(Id) | 200A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 345W | |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.154nF | |
| Gate Charge(Qg) | 197nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cel density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSR200N08 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Caratteristiche
Traduzione AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applicazioni
Traduzione AI
- Switching application
- Power Management for Inverter Systems
C148459 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
