VISHAY VOS617A-8X001T
| Produttore | |
| Cod. Prod. | VOS617A-8X001T |
| Cod. LCSC | C962591 |
| Imballo | SOIC-4-175mil |
| Numero Cliente | |
| Attr. chiave | Optocoupler, Phototransistor Output, SSOP-4, Half Pitch, Mini-Flat Package |
| Scheda Tecnica | VISHAY VOS617A-8X001T |
| Conformità RoHS | 2 documenti disponibili |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | VISHAY | |
| Imballo | SOIC-4-175mil | |
| Rise time | 3us@2mA,100Ω | |
| Output Current | 50mA | |
| Fall time | 12us | |
| Vce Saturation(VCE(sat)) | 250mV@2.5mA,5mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 130%;260% | |
| Voltage - Forward(Vf) | 1.18V | |
| Forward Current(If) | 50mA | |
| Number of Channels | 1 | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.75kV | |
| Features | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | VISHAY | |
| Imballo | SOIC-4-175mil | |
| Rise time | 3us@2mA,100Ω | |
| Output Current | 50mA | |
| Fall time | 12us | |
| Vce Saturation(VCE(sat)) | 250mV@2.5mA,5mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Voltage | 6V | |
| Current transfer ratio | 130%;260% | |
| Voltage - Forward(Vf) | 1.18V | |
| Forward Current(If) | 50mA | |
| Number of Channels | 1 | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.75kV | |
| Features | - |
Descrizione
The VOS617A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits.
Caratteristiche
- High CTR with low input current
- Low profile package (half pitch)
- High collector emitter voltage, VCEO = 80 V
- Isolation test voltage = 3750 VRMS
- Low coupling capacitance
- High common mode transient immunity
Applicazioni
- Telecom
- Industrial controls
- Battery powered equipment
- Office machines
- Programmable controllers
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.5532 | $ 0.55 |
| 10+ | $ 0.439 | $ 4.39 |
| 30+ | $ 0.39 | $ 11.70 |
| 100+ | $ 0.3297 | $ 32.97 |
| 500+ | $ 0.3019 | $ 150.95 |
| 1,000+ | $ 0.2856 | $ 285.60 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | VISHAY | |
| Imballo | SOIC-4-175mil | |
| Rise time | 3us@2mA,100Ω | |
| Output Current | 50mA | |
| Fall time | 12us | |
| Vce Saturation(VCE(sat)) | 250mV@2.5mA,5mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V | |
| Reverse Voltage | 6V | |
| Current transfer ratio | 130%;260% | |
| Voltage - Forward(Vf) | 1.18V | |
| Forward Current(If) | 50mA | |
| Number of Channels | 1 | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.75kV | |
| Features | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Isolators/Optocouplers, Optoisolators/Transistor, Photovoltaic Output Optoisolators | |
| Produttore | VISHAY | |
| Imballo | SOIC-4-175mil | |
| Rise time | 3us@2mA,100Ω | |
| Output Current | 50mA | |
| Fall time | 12us | |
| Vce Saturation(VCE(sat)) | 250mV@2.5mA,5mA | |
| Operating Temperature | -55℃~+110℃ | |
| Load Voltage | 80V |
| Tipo | Descrizione | |
|---|---|---|
| Reverse Voltage | 6V | |
| Current transfer ratio | 130%;260% | |
| Voltage - Forward(Vf) | 1.18V | |
| Forward Current(If) | 50mA | |
| Number of Channels | 1 | |
| Output Type | Phototransistor | |
| Input type | DC | |
| Isolation Voltage(Vrms) | 3.75kV | |
| Features | - |
Descrizione
The VOS617A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits.
Caratteristiche
- High CTR with low input current
- Low profile package (half pitch)
- High collector emitter voltage, VCEO = 80 V
- Isolation test voltage = 3750 VRMS
- Low coupling capacitance
- High common mode transient immunity
Applicazioni
- Telecom
- Industrial controls
- Battery powered equipment
- Office machines
- Programmable controllers
C962591 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |



