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Modelli EDAEasyEDA
onsemi HUF76609D3ST
| Produttore | |
| Cod. Prod. | HUF76609D3ST |
| Cod. LCSC | C903779 |
| Imballo | TO-252AA |
| Numero Cliente | |
| Attr. chiave | 49W 100V 10A 1V 130mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS |
| Scheda Tecnica | onsemi HUF76609D3ST |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Output Capacitance(Coss) | 75pF | |
| Pd - Power Dissipation | 49W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Output Capacitance(Coss) | 75pF | |
| Pd - Power Dissipation | 49W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±16V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Ultra-low on-state resistance
- rDS(ON) = 0.160 Ω, VGS = 10 V
- rDS(ON) = 0.165 Ω, VGS = 5 V
- Simulation Models
- Temperature-compensated PSPICE and SABER electrical models
- Spice and SABER thermal resistance models
- Peak current vs. pulse width curves
- UIS rating curves
- Switching time vs. RGS curves
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.6633 | $ 0.66 |
| 10+ | $ 0.5399 | $ 5.40 |
| 30+ | $ 0.4782 | $ 14.35 |
| 100+ | $ 0.4181 | $ 41.81 |
| 500+ | $ 0.381 | $ 190.50 |
| 1,000+ | $ 0.3625 | $ 362.50 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Output Capacitance(Coss) | 75pF | |
| Pd - Power Dissipation | 49W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | TO-252AA | |
| Output Capacitance(Coss) | 75pF | |
| Pd - Power Dissipation | 49W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 130mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±16V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Ultra-low on-state resistance
- rDS(ON) = 0.160 Ω, VGS = 10 V
- rDS(ON) = 0.165 Ω, VGS = 5 V
- Simulation Models
- Temperature-compensated PSPICE and SABER electrical models
- Spice and SABER thermal resistance models
- Peak current vs. pulse width curves
- UIS rating curves
- Switching time vs. RGS curves
C903779 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HUF76609D3(UMW) | UMW | TO-252 | 2,480 | $ 0.2176 | ||
| TPIRLR3410TRPBF | TECH PUBLIC | TO-252 | 880 | $ 0.1791 | ||
| SL12N10 | Slkor | TO-252 | 1,120 | $ 0.1367 | ||
| STD10NF10T4 | ST | TO-252(DPAK) | 890 | $ 0.6477 | ||
| VBZE15N10 | VBsemi Elec | TO-252-2 | 20 | $0.4599 $0.541 | ||
| SE10015 | SINO-IC | TO-252-2(DPAK) | 2,105 | $ 0.1764 | ||
| CMD12N15A | Cmos | TO-252 | 40 | $0.1364 $0.1435 | ||
| SP010N90TH | Siliup | TO-252 | 295 | $ 0.0881 | ||
| HKTD15N10 | Guangdong Hottech | TO-252 | 2,205 | $0.1356 $0.1427 | ||
| RD3P100SNTL1 | ROHM | TO-252 | 0 | $ 0.6664 |