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onsemi FDD6N20TM

Produttore
onsemi
Cod. Prod.
FDD6N20TM
Cod. LCSC
C903579
Imballo
TO-252AA
Numero Cliente
Attr. chiave
40W 200V 4.5A 5V 800mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS
Scheda Tecnicaonsemi FDD6N20TM
Conformità RoHS3 documenti disponibili
Non disponibile al momento
Minimo: 5Multiplo: 5Unità di vendita: Piece

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttoreonsemi
ImballoTO-252AA
Output Capacitance(Coss)45pF
Pd - Power Dissipation40W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Current - Continuous Drain(Id)4.5A
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)6.3pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)230pF
Gate Charge(Qg)6.1nC@10V
Vgs±30V
TypeN-Channel
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Descrizione

Traduzione AI

UniFET™ MOSFETs are based on planar stripe and DMOS technology. These MOSFETs are designed to minimize on-resistance, deliver superior switching performance, and provide higher avalanche energy ruggedness. This device family is suitable for switch-mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.

Caratteristiche

Traduzione AI
  • R DS(on) = 600 mΩ (typical) at V GS = 10 V, I D = 2.3 A
  • Low gate charge (typical 4.7 nC)
  • Low C rss (typical 6.3 pF)
  • 100% avalanche tested
  • RoHS compliant

Applicazioni

Traduzione AI
  • LCD/LED/PDP TVs - Consumer Appliances - Lighting - Uninterruptible Power Supplies