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onsemi FDD5680

제조업체
제조사 품번
FDD5680
LCSC 번호
C903572
포장
TO-252
고객 번호
주요 제원
60V 8.5A 4V 21mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS
데이터시트onsemi FDD5680
RoHS 준수4개 문서 이용 가능
대체 부품10
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
수량단가(참고용)총액
1+$ 0.7641$ 0.76
200+$ 0.2967$ 59.34
500+$ 0.2854$ 142.70
1,000+$ 0.2805$ 280.50
표준 패키지2500/Full Reel
수량이 많을수록 더 좋은 가격?
$

제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체onsemi
포장TO-252
Output Capacitance(Coss)210pF
Pd - Power Dissipation2.8W;60W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)8.5A
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.835nF
Gate Charge(Qg)46nC@10V
Vgs±20V
TypeN-Channel
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개요

AI 번역

This N-channel MOSFET is manufactured using onsemi's advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining low gate charge, achieving superior switching performance.

주요 특징

AI 번역
  • R DS(ON) = 0.025 Ω at V GS = 6 V.
  • 38 A, 60 V. R DS(ON) = 0.021 Ω at V GS = 10 V.
  • Low gate charge (typical 33 nC).
  • Fast switching speed.
  • High-performance trench technology for ultra-low R DS(ON).

응용 분야

AI 번역
  • DC-DC Converter
  • Motor Driver

대체 부품

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