onsemi LE25S161PCTXG
| Produttore | |
| Cod. Prod. | LE25S161PCTXG |
| Cod. LCSC | C903035 |
| Imballo | USON-8(3x4) |
| Numero Cliente | |
| Attr. chiave | 16Mbit 1.65V~1.95V 70MHz SPI USON-8(3x4) Memory RoHS |
| Scheda Tecnica | onsemi LE25S161PCTXG |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 4 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | USON-8(3x4) | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 16Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 70MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 400us | |
| Standby Supply Current | - | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | USON-8(3x4) | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 16Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 70MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 400us | |
| Standby Supply Current | - | |
| Interface | SPI |
Descrizione
The LE25S161 is a SPI bus flash memory device with a 16M bit (2048K x 8-bit) configuration. It uses a single power supply. While making the most of the features inherent to a serial flash memory device, the LE25S161 is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S161 also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Caratteristiche
- Operations power supply : 1.65 to 1.95V supply voltage range
- Operating frequency : 70MHz (max)
- Temperature range : -40 to +90℃
- Serial interface : SPI mode 0, mode 3 supported
- Electronic Identification : JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)
- Sector size : 4K bytes/small sector, 64K bytes/sector
- Erase functions : small sector erase (SSE), sector erase (SE), chip erase (CHE)
- Page program function : 256 bytes/page
- Status functions : Ready/Busy information, protect information
- Low operation current : 5.0mA (Low-power program mode, typ), 3.5mA (Low-Power Read mode, typ)
- Erase time : 10ms (SSE, typ), 15ms (SE, typ), 210ms (CHE, typ)
- Page program time (tPP) : 0.4ms/256 bytes (typ.), 0.7ms/256 bytes (max.)
- Emergency shutdown of the current consumption : transition to a standby state in less than 20μs from the active by Write Suspend : transition to a standby state in less than 40μs from the active by Software Reset
- High reliability : 100,000 erase/program cycles : 20 years data retention period
- Package : LE25S161MDTWG SOIC 8, 150 mils CASE 751BD : LE25S161FDTWG VSOIC8 NB CASE 753AA : LE25S161XATAG WLCSP8, 2.92x1.53 CASE 567LC : LE25S161PCTXG UDFN8 4x3, 0.8P CASE 506DC : KGD N/A
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.9224 | $ 0.92 |
| 10+ | $ 0.7451 | $ 7.45 |
| 30+ | $ 0.6556 | $ 19.67 |
| 100+ | $ 0.5677 | $ 56.77 |
| 500+ | $ 0.5152 | $ 257.60 |
| 1,000+ | $ 0.4875 | $ 487.50 |
Package Standard2000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | USON-8(3x4) | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 16Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 70MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 400us | |
| Standby Supply Current | - | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | onsemi | |
| Imballo | USON-8(3x4) | |
| Operating Temperature | -40℃~+90℃ | |
| Features | - | |
| Memory Size | 16Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 70MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 400us | |
| Standby Supply Current | - | |
| Interface | SPI |
Descrizione
The LE25S161 is a SPI bus flash memory device with a 16M bit (2048K x 8-bit) configuration. It uses a single power supply. While making the most of the features inherent to a serial flash memory device, the LE25S161 is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S161 also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Caratteristiche
- Operations power supply : 1.65 to 1.95V supply voltage range
- Operating frequency : 70MHz (max)
- Temperature range : -40 to +90℃
- Serial interface : SPI mode 0, mode 3 supported
- Electronic Identification : JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)
- Sector size : 4K bytes/small sector, 64K bytes/sector
- Erase functions : small sector erase (SSE), sector erase (SE), chip erase (CHE)
- Page program function : 256 bytes/page
- Status functions : Ready/Busy information, protect information
- Low operation current : 5.0mA (Low-power program mode, typ), 3.5mA (Low-Power Read mode, typ)
- Erase time : 10ms (SSE, typ), 15ms (SE, typ), 210ms (CHE, typ)
- Page program time (tPP) : 0.4ms/256 bytes (typ.), 0.7ms/256 bytes (max.)
- Emergency shutdown of the current consumption : transition to a standby state in less than 20μs from the active by Write Suspend : transition to a standby state in less than 40μs from the active by Software Reset
- High reliability : 100,000 erase/program cycles : 20 years data retention period
- Package : LE25S161MDTWG SOIC 8, 150 mils CASE 751BD : LE25S161FDTWG VSOIC8 NB CASE 753AA : LE25S161XATAG WLCSP8, 2.92x1.53 CASE 567LC : LE25S161PCTXG UDFN8 4x3, 0.8P CASE 506DC : KGD N/A
C903035 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| W25Q16FWUUIQ TR | Winbond | USON-8(3x4) | 0 | $ 2.3782 | ||
| MX25U1635FZBI-10G | MXIC | USON-8(3x4) | 0 | $ 2.046 | ||
| W25Q16DWUUIG | Winbond | USON-8(3x4) | 0 | $ 1.936 | ||
| W25Q16JWUUIQ TR | Winbond | USON-8(3x4) | 0 | $ 1.4246 |

