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onsemi LE25S161PCTXG

Produttore
Cod. Prod.
LE25S161PCTXG
Cod. LCSC
C903035
Imballo
USON-8(3x4)
Numero Cliente
Attr. chiave
16Mbit 1.65V~1.95V 70MHz SPI USON-8(3x4) Memory RoHS
Scheda Tecnicaonsemi LE25S161PCTXG
Conformità RoHS3 documenti disponibili
Parti alternative4
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 0.9224$ 0.92
10+$ 0.7451$ 7.45
30+$ 0.6556$ 19.67
100+$ 0.5677$ 56.77
500+$ 0.5152$ 257.60
1,000+$ 0.4875$ 487.50
Package Standard2000/Full Reel
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
Produttoreonsemi
ImballoUSON-8(3x4)
Operating Temperature-40℃~+90℃
Features-
Memory Size16Mbit
Voltage - Supply1.65V~1.95V
Program / Erase Cycles100,000 cycles
Clock Frequency70MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)400us
Standby Supply Current-
InterfaceSPI

Descrizione

Traduzione AI

The LE25S161 is a SPI bus flash memory device with a 16M bit (2048K x 8-bit) configuration. It uses a single power supply. While making the most of the features inherent to a serial flash memory device, the LE25S161 is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S161 also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.

Caratteristiche

Traduzione AI
  • Operations power supply : 1.65 to 1.95V supply voltage range
  • Operating frequency : 70MHz (max)
  • Temperature range : -40 to +90℃
  • Serial interface : SPI mode 0, mode 3 supported
  • Electronic Identification : JDEC ID, Device ID, Serial Flash Discoverable Parameter (SFDP)
  • Sector size : 4K bytes/small sector, 64K bytes/sector
  • Erase functions : small sector erase (SSE), sector erase (SE), chip erase (CHE)
  • Page program function : 256 bytes/page
  • Status functions : Ready/Busy information, protect information
  • Low operation current : 5.0mA (Low-power program mode, typ), 3.5mA (Low-Power Read mode, typ)
  • Erase time : 10ms (SSE, typ), 15ms (SE, typ), 210ms (CHE, typ)
  • Page program time (tPP) : 0.4ms/256 bytes (typ.), 0.7ms/256 bytes (max.)
  • Emergency shutdown of the current consumption : transition to a standby state in less than 20μs from the active by Write Suspend : transition to a standby state in less than 40μs from the active by Software Reset
  • High reliability : 100,000 erase/program cycles : 20 years data retention period
  • Package : LE25S161MDTWG SOIC 8, 150 mils CASE 751BD : LE25S161FDTWG VSOIC8 NB CASE 753AA : LE25S161XATAG WLCSP8, 2.92x1.53 CASE 567LC : LE25S161PCTXG UDFN8 4x3, 0.8P CASE 506DC : KGD N/A

Parti alternative

MPNProduttoreImballaggioDisponibilitàPrezzo unitario
W25Q16FWUUIQ TRWinbondUSON-8(3x4)0$ 2.3782
MX25U1635FZBI-10GMXICUSON-8(3x4)0$ 2.046
W25Q16DWUUIGWinbondUSON-8(3x4)0$ 1.936
W25Q16JWUUIQ TRWinbondUSON-8(3x4)0$ 1.4246