onsemi FQPF9N25CYDTU
| Hersteller | |
| Herst.-Teilenr. | FQPF9N25CYDTU |
| LCSC-Nr. | C898655 |
| Verp. | TO-220-3 |
| Kundennummer | |
| Hauptmerkm. | 250V 8.8A 4V 38W 430mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs |
| Datenblatt | onsemi FQPF9N25CYDTU |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 35nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 8.8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 35nC@10V |
Beschreibung
These N-channel enhancement-mode power MOSFETs are fabricated using a proprietary planar stripe DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters, switch-mode power supplies, DC-AC converters for uninterruptible power supplies, and motor control applications.
Merkmale
- 8.8A, 250V, R DS(on) = 0.43Ω at V GS = 10V
- Low gate charge (typical 26.5nC)
- Low C rss (typical 45.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Anwendungen
- High-efficiency switching DC/DC converters
- Switch-mode power supplies
- DC-AC inverters for UPS
- Motor control
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.9321 | $ 0.93 |
| 200+ | $ 0.3615 | $ 72.30 |
| 500+ | $ 0.3486 | $ 174.30 |
| 800+ | $ 0.3421 | $ 273.68 |
Standardgehäuse800/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 35nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 8.8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 38W | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 35nC@10V |
Beschreibung
These N-channel enhancement-mode power MOSFETs are fabricated using a proprietary planar stripe DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters, switch-mode power supplies, DC-AC converters for uninterruptible power supplies, and motor control applications.
Merkmale
- 8.8A, 250V, R DS(on) = 0.43Ω at V GS = 10V
- Low gate charge (typical 26.5nC)
- Low C rss (typical 45.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Anwendungen
- High-efficiency switching DC/DC converters
- Switch-mode power supplies
- DC-AC inverters for UPS
- Motor control
C898655 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| VBM165R11S | VBsemi Elec | TO-220AB | 10 | $1.6819 $1.9787 | ||
| CMP10N65A | Cmos | TO-220 | 195 | $0.4298 $0.4524 | ||
| HMS8N70-VB | VBsemi Elec | TO-220AB | 8 | $ 1.2969 | ||
| STP12NK30Z | ST | TO-220-3 | 138 | $ 1.1149 | ||
| PJMP390N65EC_T0_00001 | PANJIT | TO-220AB-L | 0 | $ 1.7159 | ||
| IRF740LCPBF-VB | VBsemi Elec | TO-220AB | 0 | $ 2.3343 | ||
| PJMP360N60EC_T0_00001 | PANJIT | TO-220AB-L | 0 | $ 1.6667 | ||
| VBM17R10S | VBsemi Elec | TO-220AB | 0 | $ 1.3358 | ||
| IPP60R360P7XKSA1 | Infineon | TO-220 | 0 | $ 3.0657 | ||
| MS10N40HGT0 | MASPOWER | TO-220 | 0 | $0.5601 $0.6154 |