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EDA-ModelleEasyEDA
onsemi FFSH5065B-F085
| Hersteller | |
| Herst.-Teilenr. | FFSH5065B-F085 |
| LCSC-Nr. | C898153 |
| Verp. | TO-247-2 |
| Kundennummer | |
| Hauptmerkm. | Silicon Carbide Schottky Diode |
| Datenblatt | onsemi FFSH5065B-F085 |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | TO-247-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@50A | |
| Reverse Leakage Current (Ir) | 40uA@650V | |
| Current - Rectified | 50A | |
| Non-Repetitive Peak Forward Surge Current | 1358A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | TO-247-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@50A | |
| Reverse Leakage Current (Ir) | 40uA@650V | |
| Current - Rectified | 50A | |
| Non-Repetitive Peak Forward Surge Current | 1358A |
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Beschreibung
KI-Übersetzung
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Merkmale
KI-Übersetzung
- Max Junction Temperature 175℃
- Avalanche Rated 225 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Anwendungen
KI-Übersetzung
- Automotive HEV−EV Onboard Chargers
- Automotive HEV−EV DC−DC Converters
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 15.9131 | $ 15.91 |
| 10+ | $ 15.4334 | $ 154.33 |
Standardgehäuse450/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | TO-247-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@50A | |
| Reverse Leakage Current (Ir) | 40uA@650V | |
| Current - Rectified | 50A | |
| Non-Repetitive Peak Forward Surge Current | 1358A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | TO-247-2 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.7V@50A | |
| Reverse Leakage Current (Ir) | 40uA@650V | |
| Current - Rectified | 50A | |
| Non-Repetitive Peak Forward Surge Current | 1358A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Merkmale
KI-Übersetzung
- Max Junction Temperature 175℃
- Avalanche Rated 225 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Anwendungen
KI-Übersetzung
- Automotive HEV−EV Onboard Chargers
- Automotive HEV−EV DC−DC Converters
C898153 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| CI50S170D3L2 | Tokmas | TO-247-2 | 40 | $10.2506 $12.8132 | ||
| UJ3D1250K2 | onsemi | TO-247-2 | 10 | $ 29.6635 | ||
| UJ3D1250K2 | Qorvo | TO-247-2 | 3 | $ 32.9808 | ||
| ASYD060120C | AnBon | TO-247-2 | 31 | $3.8433 $4.0455 | ||
| SC6D40065H | JSMSEMI | TO-247-2 | 10 | $ 5.4199 | ||
| SP50D120CTT | Siliup | TO-247-2L | 41 | $2.9237 $3.0775 | ||
| NDSH50120C | onsemi | TO-247-2 | 5 | $ 20.0415 | ||
| IDWD80G200C5XKSA1 | Infineon | TO-247-2 | 3 | $ 58.4468 | ||
| BCA65S50D4 | Bestirpower | TO-247-2 | 120 | $ 1.7969 | ||
| DDF3D20065H | DDF | TO-247-2L | 17 | $ 1.2446 | ||
| CI60S65D3L2 | Tokmas | TO-247-2 | 150 | $ 2.745 | ||
| SC4D15120H | JSMSEMI | TO-247-2 | 150 | $ 1.8081 | ||
| LJ1D030D120 | luJing | TO-247-2 | 147 | $1.0778 $1.2247 | ||
| SIDWD15G120C5XKSA1 | JSMSEMI | TO-247-2 | 60 | $ 3.6905 | ||
| SPCFFS15120AF | JSMSEMI | TO-247-2 | 60 | $ 3.6905 | ||
| SSTPSC15H12WL | JSMSEMI | TO-247-2 | 60 | $ 3.1218 | ||
| SMSC015SDA120B | JSMSEMI | TO-247-2 | 50 | $ 3.6905 | ||
| GD50MPS12H | Navitas | TO-247-2 | 3 | $ 15.83 | ||
| NVDSH50120C | onsemi | TO-247-2 | 0 | $ 18.4354 | ||
| IDWD20G120C5XKSA1 | Infineon | TO-247-2 | 0 | $ 7.5404 |