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EDA-ModelleEasyEDA
onsemi NSBC114YDXV6T1G
| Hersteller | |
| Herst.-Teilenr. | NSBC114YDXV6T1G |
| LCSC-Nr. | C895100 |
| Verp. | SOT-563 |
| Kundennummer | |
| Hauptmerkm. | TRANS PREBIAS 50V SOT-563 |
| Datenblatt | onsemi NSBC114YDXV6T1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 357mW | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 357mW | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
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Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Merkmale
KI-Übersetzung
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant
Vorrätig: 5
5 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.2081 | $ 0.21 |
| 10+ | $ 0.1686 | $ 1.69 |
| 30+ | $ 0.1516 | $ 4.55 |
| 100+ | $ 0.1305 | $ 13.05 |
| 500+ | $ 0.121 | $ 60.50 |
| 1,000+ | $ 0.104 | $ 104.00 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 357mW | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | onsemi | |
| Verp. | SOT-563 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 0.21 | |
| Pd - Power Dissipation | 357mW | |
| Voltage - Input(Max)(VI(off)) | 700mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Merkmale
KI-Übersetzung
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
- These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant
C895100 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| DDC114TH-7 | DIODES | SOT-563 | 20 | $ 0.0947 | ||
| EMH9 | JSCJ | SOT-563 | 940 | $ 0.085 | ||
| RN1902FE,LF(CT | TOSHIBA | SOT-563(SOT-666) | 495 | $ 0.2993 | ||
| NSVBC114YDXV6T1G | onsemi | SOT-563 | 0 | $ 0.1213 | ||
| PEMH2,315 | Nexperia | SOT-666 | 0 | $ 0.0521 | ||
| PEMH13,115 | Nexperia | SOT-666 | 0 | $ 0.2817 | ||
| PEMH2,115 | Nexperia | SOT-666-6 | 0 | $ 0.1511 | ||
| RN1903FE,LXHF(CT | TOSHIBA | SOT-563(SOT-666) | 0 | $ 0.154 | ||
| PEMH18,115 | Nexperia | SOT-666 | 0 | $ 0.0237 | ||
| EMH25T2R | ROHM | SOT-563(SOT-666) | 0 | $ 0.0712 |