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onsemi SMUN5335DW1T2G

Produttore
onsemi
Cod. Prod.
SMUN5335DW1T2G
Cod. LCSC
C894413
Imballo
SC-88-6
Numero Cliente
Attr. chiave
80 250mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SC-88-6 Bipolar Transistor Arrays, Pre-Biased RoHS
Scheda Tecnicaonsemi SMUN5335DW1T2G
Conformità RoHS4 documenti disponibili
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 0.0444$ 0.04
200+$ 0.0172$ 3.44
500+$ 0.0166$ 8.30
1,000+$ 0.0163$ 16.30
Package Standard3000/Full Reel
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Produttoreonsemi
ImballoSC-88-6
Current - Collector Cutoff100nA
Transition frequency(fT)-
Emitter-Base Voltage VEBO-
DC Current Gain80
Vce Saturation(VCE(sat))250mV@10mA,0.3mA
Operating Temperature-
Output Voltage(VO(on))200mV
Input Resistor2.2kΩ
Resistor Ratio0.047
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
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Descrizione

Traduzione AI

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Caratteristiche

Traduzione AI
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
  • These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant