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Modelli EDAEasyEDA
onsemi SMMUN2233LT1G
| Produttore | |
| Cod. Prod. | SMMUN2233LT1G |
| Cod. LCSC | C894369 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | TRANS PREBIAS 50V SOT-23 |
| Scheda Tecnica | onsemi SMMUN2233LT1G |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
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Descrizione
Traduzione AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Caratteristiche
Traduzione AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Disponibile: 3,090
3,090 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.0432 | $ 0.22 |
| 50+ | $ 0.0422 | $ 2.11 |
| 150+ | $ 0.0415 | $ 6.23 |
| 500+ | $ 0.0409 | $ 20.45 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 0.1 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 600mV | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Caratteristiche
Traduzione AI
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
C894369 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MMUN2233LT1G | onsemi | SOT-23 | 104,780 | $ 0.0486 | ||
| MMUN2216LT1G | onsemi | SOT-23 | 4,820 | $ 0.0935 | ||
| MMUN2233LT1G-GK | GOODWORK | SOT-23 | 2,420 | $0.0118 $0.0236 | ||
| MUN2214T1G | onsemi | SC-59 | 1,880 | $ 0.0819 | ||
| MUN2233T1G | onsemi | SC-59 | 0 | $ 0.0481 | ||
| SMMUN2216LT1G | onsemi | SOT-23 | 0 | $ 0.0792 | ||
| NSVMMUN2235LT1G | onsemi | SOT-23 | 0 | $ 0.2679 | ||
| PDTC143ZT,235 | Nexperia | SOT-23 | 0 | $ 0.0252 | ||
| SMMUN2214LT1G | onsemi | SOT-23 | 0 | $ 0.1077 | ||
| MMUN2234LT1G | onsemi | SOT-23 | 0 | $ 0.0329 |