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Modelli EDAEasyEDA
onsemi NVMFSC0D9N04CL
| Produttore | |
| Cod. Prod. | NVMFSC0D9N04CL |
| Cod. LCSC | C894168 |
| Imballo | DFN-8(4.9x5.8) |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 40V 50A DFN-8(4.9x5.8) |
| Scheda Tecnica | onsemi NVMFSC0D9N04CL |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 3.4nF | |
| Pd - Power Dissipation | 4.1W;166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A;316A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 0.87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.86nF | |
| Gate Charge(Qg) | 135nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 3.4nF | |
| Pd - Power Dissipation | 4.1W;166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A;316A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 0.87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.86nF | |
| Gate Charge(Qg) | 135nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Advanced dual-side cooling package
- Compact package (5x6 mm) for space-constrained designs
- Ultra-low on-resistance RDS(on) for reduced conduction loss
- Low gate charge QG and capacitance for reduced switching loss
- AEC-Q101 qualified with PPAP documentation available
- Lead-free, RoHS compliant
- MSL1 high-reliability package design
Applicazioni
Traduzione AI
- OR-gate FET / load switch
- Synchronous rectifier
- DC-DC conversion
Disponibile: 50
50 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 6.3138 | $ 6.31 |
| 10+ | $ 6.0084 | $ 60.08 |
| 30+ | $ 5.8206 | $ 174.62 |
| 100+ | $ 5.6638 | $ 566.38 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 3.4nF | |
| Pd - Power Dissipation | 4.1W;166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A;316A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 0.87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.86nF | |
| Gate Charge(Qg) | 135nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DFN-8(4.9x5.8) | |
| Output Capacitance(Coss) | 3.4nF | |
| Pd - Power Dissipation | 4.1W;166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A;316A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 0.87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.86nF | |
| Gate Charge(Qg) | 135nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Advanced dual-side cooling package
- Compact package (5x6 mm) for space-constrained designs
- Ultra-low on-resistance RDS(on) for reduced conduction loss
- Low gate charge QG and capacitance for reduced switching loss
- AEC-Q101 qualified with PPAP documentation available
- Lead-free, RoHS compliant
- MSL1 high-reliability package design
Applicazioni
Traduzione AI
- OR-gate FET / load switch
- Synchronous rectifier
- DC-DC conversion
C894168 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NTMFS5C410NLT1G | onsemi | SO-8FL | 7,922 | $ 1.1685 | ||
| NVMFS5C404NWFAFT1G | onsemi | SO-8FL | 1 | $ 7.4067 | ||
| NVMFS5C410NLWFAFT1G | onsemi | SO-8FL | 36 | $ 4.4137 | ||
| AONS66407 | AOS | DFN-8(5x6) | 8 | $ 3.6071 | ||
| NTMFS5C410NLTT1G | onsemi | SO-8FL | 2 | $ 8.3799 | ||
| NVMFS5C410NLWFET1G | onsemi | DFN-5(5x6)(SO-8FL) | 0 | $ 3.1139 | ||
| NVMFS5C404NLWFET1G | onsemi | DFN-5(5x6)(SO-8FL) | 0 | $ 4.02 | ||
| NVMFS5C410NLAFT1G | onsemi | SO-8FL | 0 | $ 4.6611 | ||
| NTMFS5H400NLT3G | onsemi | SO-8-FL-5.8mm | 0 | $ 6.3441 | ||
| NCEP008NH40GU | NCE | PDFN-8L(5x6) | 0 | $ 1.4546 |