Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDMS86101E
| Producent | |
| Nr części prod. | FDMS86101E |
| Nr LCSC | C891085 |
| Opak. | PQFN-8(4.9x5.8) |
| Numer Klienta | |
| Klucz. cechy | 100V 60A 2.9V 104W 6.3mΩ@10V 1 N-channel N-Channel PQFN-8(4.9x5.8) Single FETs, MOSFETs |
| Karta Katalogowa | onsemi FDMS86101E |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-8(4.9x5.8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 460pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.255nF | |
| Gate Charge(Qg) | 39nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-8(4.9x5.8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 460pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.255nF | |
| Gate Charge(Qg) | 39nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET is manufactured using onsemi's advanced POWERTRENCH® process, which has been specially optimized to minimize on-resistance while maintaining superior switching performance.
Funkcje
Tłumaczenie AI
- Max RDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
- Max RDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
- Advanced package and die combination for low RDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- 100% Rg tested
- Lead-free, RoHS compliant
Zastosowania
Tłumaczenie AI
- DC-DC Conversion
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 3.2645 | $ 3.26 |
| 200+ | $ 1.2642 | $ 252.84 |
| 500+ | $ 1.2194 | $ 609.70 |
| 1,000+ | $ 1.1978 | $ 1197.80 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-8(4.9x5.8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 460pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.255nF | |
| Gate Charge(Qg) | 39nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | PQFN-8(4.9x5.8) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 460pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.255nF | |
| Gate Charge(Qg) | 39nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET is manufactured using onsemi's advanced POWERTRENCH® process, which has been specially optimized to minimize on-resistance while maintaining superior switching performance.
Funkcje
Tłumaczenie AI
- Max RDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
- Max RDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
- Advanced package and die combination for low RDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- 100% Rg tested
- Lead-free, RoHS compliant
Zastosowania
Tłumaczenie AI
- DC-DC Conversion
C891085 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| FDMS86101DC | onsemi | PQFN-8(5x6) | 1,006 | $ 1.1542 | ||
| NTMFS011N15MC | onsemi | FQFN-8(5x6) | 4 | $ 17.0082 | ||
| IRFH5210TRPBF | Infineon | PQFN-8(5x6) | 7,954 | $ 1.2166 | ||
| IRFH5110TRPBF | Infineon | PQFN-8(5x6) | 7 | $1.5910 $3.7879 | ||
| IRFH5010TRPBF | Infineon | PQFN-8(5x6) | 46 | $ 1.8879 | ||
| IRFH5015TRPBF | Infineon | PQFN-8(5x6) | 501 | $ 1.0932 | ||
| NTMFS015N15MC | onsemi | PQFN-8(5x6) | 0 | $ 5.8877 | ||
| CJAC10TH10 | JSCJ | PQFNWB-8L(5x6) | 0 | $ 0.6093 | ||
| NTMFS10N7D2C | onsemi | PQFN-8(5x6) | 0 | $1.3038 $2.2478 | ||
| NTMFS010N10GTWG | onsemi | PQFN-8(5x6) | 0 | $ 1.9906 |