onsemi FDFMA2P029Z-F106
| Producent | |
| Nr części prod. | FDFMA2P029Z-F106 |
| Nr LCSC | C890881 |
| Opak. | WDFN-6 |
| Numer Klienta | |
| Klucz. cechy | 20V 3.1A 1.5V 1.4W 95mΩ@4.5V 1 P-Channel WDFN-6 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi FDFMA2P029Z-F106 |
| Zgodność z RoHS | 3 dokumentów dostępnych |
| Części alternatywne | 1 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 10nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 10nC@4.5V |
Opis
Designed for battery charging switches in mobile phones and other ultra-portable applications, this device is a single-package solution. It features an extremely low MOSFET on-resistance and a separately connected low forward-voltage Schottky diode for minimal conduction losses. The MicroFET 2X2 package delivers excellent thermal performance for its physical footprint, making it ideal for linear-mode applications.
Funkcje
- MOSFET
- Maximum rDS(on) = 95 mΩ at VGS = -4.5 V, ID = -3.1 A
- Maximum rDS(on) = 141 mΩ at VGS = -2.5 V, ID = -2.5 A
- HBM ESD protection rating >2.5 kV
- Schottky Diode
- VF < 0.37 V at 500 mA
- New MicroFET 2 x 2 mm package, low profile height — 0.8 mm maximum
- Lead-free and RoHS compliant
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.6089 | $ 0.61 |
| 200+ | $ 0.2363 | $ 47.26 |
| 500+ | $ 0.2284 | $ 114.20 |
| 1,000+ | $ 0.2236 | $ 223.60 |
Standardowa Obudowa3000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 10nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | WDFN-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 95mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 720pF | |
| Gate Charge(Qg) | 10nC@4.5V |
Opis
Designed for battery charging switches in mobile phones and other ultra-portable applications, this device is a single-package solution. It features an extremely low MOSFET on-resistance and a separately connected low forward-voltage Schottky diode for minimal conduction losses. The MicroFET 2X2 package delivers excellent thermal performance for its physical footprint, making it ideal for linear-mode applications.
Funkcje
- MOSFET
- Maximum rDS(on) = 95 mΩ at VGS = -4.5 V, ID = -3.1 A
- Maximum rDS(on) = 141 mΩ at VGS = -2.5 V, ID = -2.5 A
- HBM ESD protection rating >2.5 kV
- Schottky Diode
- VF < 0.37 V at 500 mA
- New MicroFET 2 x 2 mm package, low profile height — 0.8 mm maximum
- Lead-free and RoHS compliant
C890881 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| IRFHS9301TRPBF | Infineon | TSDSON-6 | 56 | $ 0.9033 |