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EDA-ModelleEasyEDA
onsemi DTC123TET1G
| Hersteller | |
| Herst.-Teilenr. | DTC123TET1G |
| LCSC-Nr. | C890587 |
| Verp. | SC-75-3 |
| Kundennummer | |
| Hauptmerkm. | 50V 160 100mA 200mW NPN 1 NPN (Pre-Biased) SC-75-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | onsemi DTC123TET1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
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Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Reduced PCB space
- Fewer component count
- S-prefix for automotive and other applications requiring specific origin and change control; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
Vorrätig: 100
100 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1867 | $ 0.93 |
| 50+ | $ 0.1841 | $ 9.21 |
| 150+ | $ 0.1824 | $ 27.36 |
| 500+ | $ 0.1808 | $ 90.40 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,1mA | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Reduced PCB space
- Fewer component count
- S-prefix for automotive and other applications requiring specific origin and change control; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C890587 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| DTC123JET1G | onsemi | SC-75(SOT-416) | 1,180 | $ 0.0566 | ||
| LDTC123JET1G | LRC | SC-89 | 2,890 | $ 0.0656 | ||
| DTC023JEBTL | ROHM | SOT-416 | 2,820 | $ 0.0278 | ||
| DTC123JE | CBI | SOT-523 | 2,000 | $ 0.0232 | ||
| DTC143ZET1G | onsemi | SC-75(SOT-416) | 7,635 | $ 0.1041 | ||
| DTC123JE | HXY MOSFET | SOT-523 | 9,060 | $0.0227 $0.0238 | ||
| DTC123JE | Slkor | SOT-523 | 2,800 | $ 0.02 | ||
| DDTC123JE-7-F | DIODES | SOT-523 | 1,570 | $ 0.0618 | ||
| NSVDTC123JET1G | onsemi | SC-75-3 | 0 | $ 0.0693 | ||
| DTC143TET1G | onsemi | SC-75-3 | 0 | $ 0.0444 |