Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi DTA123TET1G
| Hersteller | |
| Herst.-Teilenr. | DTA123TET1G |
| LCSC-Nr. | C890576 |
| Verp. | SC-75-3 |
| Kundennummer | |
| Hauptmerkm. | 50V 160 100mA 200mW PNP 1 PNP Pre-Biased SC-75-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | onsemi DTA123TET1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
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Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Board space savings
- Reduced component count
- Suitable for automotive and other applications with unique sourcing and change control requirements, available with S and NSV prefixes; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0239 | $ 0.02 |
| 200+ | $ 0.0093 | $ 1.86 |
| 500+ | $ 0.009 | $ 4.50 |
| 1,000+ | $ 0.0088 | $ 8.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-75-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 160 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | - | |
| Pd - Power Dissipation | 200mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Board space savings
- Reduced component count
- Suitable for automotive and other applications with unique sourcing and change control requirements, available with S and NSV prefixes; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C890576 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| DTA143ZET1G | onsemi | SC-75 | 800 | $ 0.0632 | ||
| DTA123JET1G | onsemi | SC-75(SOT-416) | 20 | $ 0.2214 | ||
| DTA143ZE | YANGJIE | SOT-523(SC-75) | 2,270 | $ 0.0393 | ||
| DTA143ZE | MSKSEMI | SOT-523 | 1,320 | $0.0218 $0.0256 | ||
| DTA143ZE | Slkor | SOT-523 | 1,200 | $ 0.0198 | ||
| DTA023YEBTL | ROHM | SOT-416FL | 90 | $ 0.159 | ||
| DTA143TET1G | onsemi | SC-75(SOT-416) | 0 | $ 0.1006 | ||
| DTA114YET1G | onsemi | SC-75(SOT-416) | 0 | $ 0.0765 | ||
| DTA143ZE | JSCJ | SOT-523 | 0 | $ 0.0331 | ||
| FJY4006R | onsemi | SOT-523F | 0 | $ 0.0442 |