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EDA-ModelleEasyEDA
Infineon IRFR7540PBF
| Hersteller | |
| Herst.-Teilenr. | IRFR7540PBF |
| LCSC-Nr. | C87107 |
| Verp. | TO-252(DPAK) |
| Kundennummer | |
| Hauptmerkm. | 60V 90A 3.7V 140W 4.8mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs |
| Datenblatt | Infineon IRFR7540PBF |
| Alternativteile | 13 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 410pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 3.7V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 410pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free, RoHS compliant
Anwendungen
KI-Übersetzung
- Brushed motor drive applications
- Brushless DC (BLDC) motor drive applications
- Battery-powered circuits
- Half-bridge and full-bridge topologies
- Synchronous rectifier applications
- Resonant mode power supplies
- OR switching and redundant power switching
- DC/DC and AC/DC converters
- DC/AC inverters
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.3339 | $ 1.33 |
| 10+ | $ 1.3192 | $ 13.19 |
| 30+ | $ 1.3095 | $ 39.29 |
| 100+ | $ 1.2997 | $ 129.97 |
Standardgehäuse75/Full Tube | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 410pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 3.7V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252(DPAK) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 410pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF | |
| RDS(on) | 4.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.36nF | |
| Gate Charge(Qg) | 86nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Lead-free, RoHS compliant
Anwendungen
KI-Übersetzung
- Brushed motor drive applications
- Brushless DC (BLDC) motor drive applications
- Battery-powered circuits
- Half-bridge and full-bridge topologies
- Synchronous rectifier applications
- Resonant mode power supplies
- OR switching and redundant power switching
- DC/DC and AC/DC converters
- DC/AC inverters
C87107 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRFR7540TRPBF | Infineon | DPAK(TO-252AA) | 2,580 | $ 0.6174 | ||
| IRLR3636TRPBF-VB | VBsemi Elec | TO-252 | 166 | $0.8277 $0.9737 | ||
| TSM60N06CPROG-VB | VBsemi Elec | TO-252 | 100 | $0.8530 $1.0035 | ||
| IRFR1010ZTRLPBF-VB | VBsemi Elec | TO-252 | 50 | $0.8152 $0.959 | ||
| AUIRLR3705ZTRPBF-VB | VBsemi Elec | TO-252 | 50 | $0.8449 $0.9939 | ||
| BUK6207-55C-VB | VBsemi Elec | TO-252 | 40 | $0.8260 $0.9717 | ||
| STD65N55F3-VB | VBsemi Elec | TO-252 | 36 | $0.8544 $1.0051 | ||
| SSF6808D-VB | VBsemi Elec | TO-252 | 20 | $0.8357 $0.9831 | ||
| IPD90N06S4L-05-VB | VBsemi Elec | TO-252 | 16 | $1.0886 $1.1458 | ||
| CEU6086-VB | VBsemi Elec | TO-252 | 15 | $0.9691 $1.0201 | ||
| 2SK2553-VB | VBsemi Elec | TO-252 | 18 | $0.7936 $0.9336 | ||
| 2SK3135-VB | VBsemi Elec | TO-252 | 16 | $0.7936 $0.9336 | ||
| IRFR7540TRLPBF | Infineon | DPAK | 0 | $ 0.7656 |