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onsemi FOD8316R2

Hersteller
onsemi
Herst.-Teilenr.
FOD8316R2
LCSC-Nr.
C80622
Verp.
SOIC-16-300mil
Kundennummer
Hauptmerkm.
3A 3V~5.5V DC SOIC-16-300mil Isolators - Gate Drivers RoHS
Datenblattonsemi FOD8316R2
RoHS-Konformität4 Dokumente verfügbar
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 5.3401$ 5.34
10+$ 4.5987$ 45.99
30+$ 4.1582$ 124.75
100+$ 3.7131$ 371.31
750+$ 3.5074$ 2630.55
1,500+$ 3.4153$ 5122.95
Standardgehäuse750/Full Tube
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIsolators/Isolators - Gate Drivers
Herstelleronsemi
Verp.SOIC-16-300mil
Power Dissipation-
Output Current3A
Data Rate-
Operating Temperature-40℃~+100℃
Output voltage-
Reverse Voltage-
Voltage - Supply3V~5.5V
Forward Current(If)-
CMTI(kV/us)35kV/us
Number of Channels1
Propagation Delay(tpd)500ns;500ns
Input threshold current800uA
Voltage - Forward(Vf)-
Isolation Voltage(Vrms)4.243kV
Input TypeDC
FeaturesOpen-drain output;Under-voltage lockout
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Beschreibung

KI-Übersetzung

The FOD8316 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving most 1200 V / 150 A IGBTs. It is ideally suited for fast-switching driving of power IGBTs and MOSFETs used in motor-control inverter applications and high-performance power systems. The FOD8316 offers critical protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs. The device utilizes Fairchild’s proprietary Optoplanar coplanar packaging technology, and optimized IC design to achieve high noise immunity, characterized by high common-mode rejection and power supply rejection specifications. The FOD8316 consists of an integrated gate drive optocoupler featuring low RDS(ON) CMOS transistors to drive the IGBT from rail-to-rail and an integrated high-speed isolated feedback for fault sensing. The device is housed in a compact 16-pin small-outline plastic package which meets the 8 mm creepage and clearance requirements.

Merkmale

KI-Übersetzung
  • High Noise Immunity Characterized by Common Mode Rejection – 35 kV/µs Minimum, VCM = 1500 VPEAK
  • 2.5 A Peak Output Current Driving Capability for Most 1200 V / 150 A IGBTs
  • Optically Isolated Fault Sensing Feedback
  • “Soft” IGBT Turn-off
  • Built-in IGBT Protection – Desaturation Detection – Under-Voltage Lockout (UVLO) Protection
  • Wide Supply Voltage Range: 15 V to 30 V – P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to the Supply Rail (Rail-to-Rail Output)
  • 3.3 V / 5 V, CMOS/TTL Compatible Inputs
  • High Speed – 500 ns Maximum Propagation Delay Over Full Operating Temperature Range
  • Extended Industrial Temperate Range: -40°C to 100°C
  • Safety and Regulatory Approvals – UL1577, 4,243 VRMS for 1 Minute – DIN EN/IEC 60747-5-5: 1,414 VPEAK Working Insulation Voltage Rating 8,000 VPEAK Transient Isolation Voltage Rating
  • RDS(ON) of 1 Ω (Typical) Offers Lower Power Dissipation
  • User-Configurable: Inverting, Non-inverting, Auto-reset, Auto-shutdown
  • 8 mm Creepage and Clearance Distances

Anwendungen

KI-Übersetzung
  • Industrial Inverter
  • Induction Heating
  • Isolated IGBT Drive