YANGJIE MT100DT12L1
| Producent | YANGJIEAsian Brands |
| Nr części prod. | MT100DT12L1 |
| Nr LCSC | C781202 |
| Opak. | L1 |
| Numer Klienta | |
| Klucz. cechy | 120mA 150mA 1.2kV 1 SCR and 6 Diode L1 TRIACs |
| Karta Katalogowa | YANGJIE MT100DT12L1 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Thyristors/TRIACs | |
| Producent | YANGJIE | |
| Opak. | L1 | |
| Holding Current (Ih) | 120mA | |
| Operating Temperature | -40℃~+125℃@(Tj) | |
| Current - Gate Trigger(Igt) | 150mA | |
| Voltage - On State(Vtm) | 1.25V | |
| Average Gate Power Dissipation (PG(AV)) | - | |
| Current - On State(It(RMS)) | - | |
| Peak off - state voltage(Vdrm) | 1.2kV | |
| Current - Surge(Itsm@f) | 1.2kA | |
| SCR Type | 1 SCR and 6 Diode | |
| Gate Trigger Voltage (Vgt) | 3V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Thyristors/TRIACs | |
| Producent | YANGJIE | |
| Opak. | L1 | |
| Holding Current (Ih) | 120mA | |
| Operating Temperature | -40℃~+125℃@(Tj) | |
| Current - Gate Trigger(Igt) | 150mA | |
| Voltage - On State(Vtm) | 1.25V |
| Typ | Opis | |
|---|---|---|
| Average Gate Power Dissipation (PG(AV)) | - | |
| Current - On State(It(RMS)) | - | |
| Peak off - state voltage(Vdrm) | 1.2kV | |
| Current - Surge(Itsm@f) | 1.2kA | |
| SCR Type | 1 SCR and 6 Diode | |
| Gate Trigger Voltage (Vgt) | 3V |
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 45.6357 | $ 45.64 |
| 10+ | $ 43.73 | $ 437.30 |
Standardowa Obudowa6/Full Box | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Thyristors/TRIACs | |
| Producent | YANGJIE | |
| Opak. | L1 | |
| Holding Current (Ih) | 120mA | |
| Operating Temperature | -40℃~+125℃@(Tj) | |
| Current - Gate Trigger(Igt) | 150mA | |
| Voltage - On State(Vtm) | 1.25V | |
| Average Gate Power Dissipation (PG(AV)) | - | |
| Current - On State(It(RMS)) | - | |
| Peak off - state voltage(Vdrm) | 1.2kV | |
| Current - Surge(Itsm@f) | 1.2kA | |
| SCR Type | 1 SCR and 6 Diode | |
| Gate Trigger Voltage (Vgt) | 3V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Thyristors/TRIACs | |
| Producent | YANGJIE | |
| Opak. | L1 | |
| Holding Current (Ih) | 120mA | |
| Operating Temperature | -40℃~+125℃@(Tj) | |
| Current - Gate Trigger(Igt) | 150mA | |
| Voltage - On State(Vtm) | 1.25V |
| Typ | Opis | |
|---|---|---|
| Average Gate Power Dissipation (PG(AV)) | - | |
| Current - On State(It(RMS)) | - | |
| Peak off - state voltage(Vdrm) | 1.2kV | |
| Current - Surge(Itsm@f) | 1.2kA | |
| SCR Type | 1 SCR and 6 Diode | |
| Gate Trigger Voltage (Vgt) | 3V |
Pomoc i opiniePokaż podobne produkty (0) >
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541300000 |
| USHTS | 8541300080 |
| TARIC | 8541300000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541300000 |
| BRHTS | 85413019 |
| INHTS | 85413010 |
| MXHTS | 8541.30.01 |


