VISHAY IRFIZ14GPBF
| Hersteller | |
| Herst.-Teilenr. | IRFIZ14GPBF |
| LCSC-Nr. | C727741 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | 60V 8A 2V 27W 200mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datenblatt | VISHAY IRFIZ14GPBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@10V |
Beschreibung
RoHS compliant. Third-generation power MOSFETs offer designers an optimal combination of fast switching, robust device design, low on-resistance, and high cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides high isolation capability and low thermal resistance between the heatsink tab and external heatsink. This isolation is equivalent to using a 100-micron mica barrier in a standard TO-220 product. The FULLPAK package can be mounted to a heatsink using a single clip or single screw.
Merkmale
- Isolated package
- High-voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Heatsink-to-pin creepage distance = 4.8 mm
- Operating temperature up to 175 °C
- Dynamic dv/dt rating
- Low thermal resistance
- RoHS compliant per Directive 2002/95/EC
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8212 | $ 0.82 |
| 200+ | $ 0.318 | $ 63.60 |
| 500+ | $ 0.3072 | $ 153.60 |
| 1,000+ | $ 0.301 | $ 301.00 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 11nC@10V |
Beschreibung
RoHS compliant. Third-generation power MOSFETs offer designers an optimal combination of fast switching, robust device design, low on-resistance, and high cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides high isolation capability and low thermal resistance between the heatsink tab and external heatsink. This isolation is equivalent to using a 100-micron mica barrier in a standard TO-220 product. The FULLPAK package can be mounted to a heatsink using a single clip or single screw.
Merkmale
- Isolated package
- High-voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Heatsink-to-pin creepage distance = 4.8 mm
- Operating temperature up to 175 °C
- Dynamic dv/dt rating
- Low thermal resistance
- RoHS compliant per Directive 2002/95/EC
C727741 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRLIZ14GPBF | VISHAY | TO-220 | 49 | $ 7.7494 | ||
| WSR20N10 | Winsok Semicon | TO-220-3L | 30 | $0.3612 $0.4249 | ||
| FQP16N25-VB | VBsemi Elec | TO-220AB | 20 | $ 1.2481 | ||
| FDP20N50-VB | VBsemi Elec | TO-220AB | 14 | $2.3703 $2.7885 | ||
| IRLZ14PBF-BE3 | VISHAY | TO-220AB | 0 | $ 0.5848 | ||
| RFP12N10L | onsemi | TO-220AB-3 | 0 | $ 1.4443 | ||
| NTE2390 | NTE Electronics | TO-220 | 0 | $ 7.2528 | ||
| TP90H180PS | Transphorm | TO-220AB | 0 | $ 26.8545 | ||
| SIHP18N60E-GE3 | VISHAY | TO-220AB | 0 | $ 3.9618 | ||
| IRLI520NPBF | Infineon | TO-220 | 0 | $ 2.0536 |