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EDA-ModelleEasyEDA
ST STW24N60M2
| Hersteller | |
| Herst.-Teilenr. | STW24N60M2 |
| LCSC-Nr. | C726092 |
| Verp. | TO-247 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 18A TO-247 |
| Datenblatt | ST STW24N60M2 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Merkmale
KI-Übersetzung
- Extremely low gate charge
- Lower RDS(on) X area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Anwendungen
KI-Übersetzung
- Switching applications
Vorrätig: 587
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.7847 | $ 1.78 |
| 10+ | $ 1.5127 | $ 15.13 |
| 30+ | $ 1.3635 | $ 40.91 |
| 100+ | $ 1.1947 | $ 119.47 |
| 500+ | $ 1.121 | $ 560.50 |
| 1,000+ | $ 1.0866 | $ 1086.60 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 29nC@480V | |
| Vgs | ±25V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Merkmale
KI-Übersetzung
- Extremely low gate charge
- Lower RDS(on) X area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Anwendungen
KI-Übersetzung
- Switching applications
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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