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EDA-ModelleEasyEDA
VBsemi Elec AO4800-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AO4800-VB |
| LCSC-Nr. | C709891 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH ARR 30V 6.8A SO-8 |
| Datenblatt | VBsemi Elec AO4800-VB |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V | |
| Pd - Power Dissipation | 2.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 586pF | |
| Gate Charge(Qg) | 15nC@10V;3.7nC@4.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 586pF | |
| Gate Charge(Qg) | 15nC@10V;3.7nC@4.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements per IEC 61249-2-21
- Trench power MOSFET
- 100% tested for single-pulse avalanche energy (UIS)
- 100% tested for gate resistance (Rg)
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Set-top box
- Low-current DC/DC converter
Vorrätig: 1,090
1,090 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3555$ 0.3378 | $ 1.69 |
| 50+ | $ 0.282$ 0.2679 | $ 13.40 |
| 150+ | $ 0.2505$ 0.2380 | $ 35.70 |
| 500+ | $ 0.2112$ 0.2007 | $ 100.35 |
| 2,500+ | $ 0.171$ 0.1625 | $ 406.25 |
| 4,000+ | $ 0.1605$ 0.1525 | $ 610.00 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V | |
| Pd - Power Dissipation | 2.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 586pF | |
| Gate Charge(Qg) | 15nC@10V;3.7nC@4.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 586pF | |
| Gate Charge(Qg) | 15nC@10V;3.7nC@4.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compliant with halogen-free requirements per IEC 61249-2-21
- Trench power MOSFET
- 100% tested for single-pulse avalanche energy (UIS)
- 100% tested for gate resistance (Rg)
- Compliant with RoHS Directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Set-top box
- Low-current DC/DC converter
C709891 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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