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EDA-ModelleEasyEDA
VBsemi Elec AF4502CSLA-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AF4502CSLA-VB |
| LCSC-Nr. | C709877 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH+P-CH ARR 30V 8A SO-8 |
| Datenblatt | VBsemi Elec AF4502CSLA-VB |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF;115pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;57pF | |
| RDS(on) | 18mΩ@10V;40mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 510pF;620pF | |
| Gate Charge(Qg) | 6.2nC@10V;18.5nC@10V | |
| Type | N-Channel + P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF;115pF | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;57pF | |
| RDS(on) | 18mΩ@10V;40mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 510pF;620pF | |
| Gate Charge(Qg) | 6.2nC@10V;18.5nC@10V | |
| Type | N-Channel + P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant per directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Motor drive
- Power bank
Vorrätig: 36
36 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5191$ 0.4932 | $ 0.49 |
| 10+ | $ 0.4361$ 0.4143 | $ 4.14 |
| 30+ | $ 0.3987$ 0.3788 | $ 11.36 |
| 100+ | $ 0.3548$ 0.3371 | $ 33.71 |
| 500+ | $ 0.249$ 0.2366 | $ 118.30 |
| 1,000+ | $ 0.236$ 0.2242 | $ 224.20 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF;115pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;57pF | |
| RDS(on) | 18mΩ@10V;40mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 510pF;620pF | |
| Gate Charge(Qg) | 6.2nC@10V;18.5nC@10V | |
| Type | N-Channel + P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 95pF;115pF | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;57pF | |
| RDS(on) | 18mΩ@10V;40mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 510pF;620pF | |
| Gate Charge(Qg) | 6.2nC@10V;18.5nC@10V | |
| Type | N-Channel + P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- RoHS compliant per directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Motor drive
- Power bank
C709877 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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