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EDA-ModelleEasyEDA
MATSUKI ME08N20-G
| Hersteller | MATSUKIAsian Brands |
| Herst.-Teilenr. | ME08N20-G |
| LCSC-Nr. | C709728 |
| Verp. | TO-252-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 200V 9A TO-252-3 |
| Datenblatt | MATSUKI ME08N20-G |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 74.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.61nF | |
| Gate Charge(Qg) | 51.7nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 74.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.61nF | |
| Gate Charge(Qg) | 51.7nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The ME08N20 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
Merkmale
KI-Übersetzung
- RDS(ON) ≤ 0.4Ω @ Vgs = 10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Anwendungen
KI-Übersetzung
- Power Management
- DC/DC Converter
- LCD TV & Monitor Display inverter
- CCFL inverter
- Secondary Synchronous Rectification
Vorrätig: 1,450
1,450 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2444 | $ 1.22 |
| 50+ | $ 0.2151 | $ 10.76 |
| 150+ | $ 0.2026 | $ 30.39 |
| 500+ | $ 0.1869 | $ 93.45 |
| 2,500+ | $ 0.18 | $ 450.00 |
| 5,000+ | $ 0.1758 | $ 879.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 74.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.61nF | |
| Gate Charge(Qg) | 51.7nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 74.9W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | 350mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.61nF | |
| Gate Charge(Qg) | 51.7nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The ME08N20 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
Merkmale
KI-Übersetzung
- RDS(ON) ≤ 0.4Ω @ Vgs = 10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Anwendungen
KI-Übersetzung
- Power Management
- DC/DC Converter
- LCD TV & Monitor Display inverter
- CCFL inverter
- Secondary Synchronous Rectification
C709728 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |