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Nexperia PBSS4310PAS-QX
| Hersteller | |
| Herst.-Teilenr. | PBSS4310PAS-QX |
| LCSC-Nr. | C7024992 |
| Verp. | DFN-3(2x2) |
| Kundennummer | |
| Hauptmerkm. | 10V 3A NPN 1 NPN DFN-3(2x2) Single Bipolar Transistors RoHS |
| Datenblatt | Nexperia PBSS4310PAS-QX |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | DFN-3(2x2) | |
| Current - Collector Cutoff | 100nA;50uA | |
| Operating Temperature | -55℃~+175℃ | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 10V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 325;300;275;250 | |
| Current - Collector(Ic) | 3A | |
| Pd - Power Dissipation | 560mW;1.1W;1.54W | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 25mV;35mV;55mV;85mV;90mV;110mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | DFN-3(2x2) | |
| Current - Collector Cutoff | 100nA;50uA | |
| Operating Temperature | -55℃~+175℃ | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 10V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 325;300;275;250 | |
| Current - Collector(Ic) | 3A | |
| Pd - Power Dissipation | 560mW;1.1W;1.54W | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 25mV;35mV;55mV;85mV;90mV;110mV |
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.2027 | $ 0.20 |
| 200+ | $ 0.0809 | $ 16.18 |
| 500+ | $ 0.0782 | $ 39.10 |
| 1,000+ | $ 0.0769 | $ 76.90 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | DFN-3(2x2) | |
| Current - Collector Cutoff | 100nA;50uA | |
| Operating Temperature | -55℃~+175℃ | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 10V | |
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 325;300;275;250 | |
| Current - Collector(Ic) | 3A | |
| Pd - Power Dissipation | 560mW;1.1W;1.54W | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 25mV;35mV;55mV;85mV;90mV;110mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | DFN-3(2x2) | |
| Current - Collector Cutoff | 100nA;50uA | |
| Operating Temperature | -55℃~+175℃ | |
| Transition frequency(fT) | 80MHz | |
| Collector - Emitter Voltage VCEO | 10V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 8V | |
| DC Current Gain | 325;300;275;250 | |
| Current - Collector(Ic) | 3A | |
| Pd - Power Dissipation | 560mW;1.1W;1.54W | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 25mV;35mV;55mV;85mV;90mV;110mV |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |