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Infineon S25HL01GTDPMHA013
| 제조업체 | |
| 제조사 품번 | S25HL01GTDPMHA013 |
| LCSC 번호 | C6998410 |
| 포장 | SOIC-16-300mil |
| 고객 번호 | |
| 주요 제원 | 1Gbit 2.7V~3.6V SPI SOIC-16-300mil Memory |
| 데이터시트 | Infineon S25HL01GTDPMHA013 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon | |
| 포장 | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon | |
| 포장 | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 31.799 | $ 31.80 |
| 200+ | $ 12.6878 | $ 2537.56 |
| 500+ | $ 12.265 | $ 6132.50 |
| 1,450+ | $ 12.0551 | $ 17479.90 |
표준 패키지1450/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon | |
| 포장 | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Integrated Circuits (ICs)/Memory/Memory | |
| 제조업체 | Infineon | |
| 포장 | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Power-on reset;Hardware write protection;ECC error correction | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 2,560,000 Cycles |
| 타입 | 설명 | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
도움말 및 피드백유사 제품 보기 (0) >
주요 특징
AI 번역
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
C6998410 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |