VBsemi Elec AO4453-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AO4453-VB |
| LCSC-Nr. | C692942 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 12V 16A SO-8 |
| Datenblatt | VBsemi Elec AO4453-VB |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- RoHS compliant per directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Load Switch - Battery Switch
Vorrätig: 415
415 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7122$ 0.6766 | $ 0.68 |
| 10+ | $ 0.5913$ 0.5618 | $ 5.62 |
| 30+ | $ 0.539$ 0.5121 | $ 15.36 |
| 100+ | $ 0.4737$ 0.4501 | $ 45.01 |
| 500+ | $ 0.3349$ 0.3182 | $ 159.10 |
| 1,000+ | $ 0.3185$ 0.3026 | $ 302.60 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 16A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 110nC@5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- RoHS compliant per directive 2002/95/EC
Anwendungen
KI-Übersetzung
- Load Switch - Battery Switch
C692942 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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