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TOSHIBA TCR2EN13,LF(SE

Hersteller
Herst.-Teilenr.
TCR2EN13,LF(SE
LCSC-Nr.
C6880261
Verp.
SDFN-4(0.8x0.8)
Kundennummer
Hauptmerkm.
1.3V Positive Fixed SDFN-4(0.8x0.8) Voltage Regulators - Linear, Low Drop Out (LDO) Regulators RoHS
DatenblattTOSHIBA TCR2EN13,LF(SE
Alternativteile4
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Stk.E-Preis(Nur als Referenz)Gesamtbetrag
1+$ 0.18$ 0.18
200+$ 0.0718$ 14.36
500+$ 0.0694$ 34.70
1,000+$ 0.0682$ 68.20
Standardgehäuse10000/Full Reel
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Power Management (PMIC)/Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
HerstellerTOSHIBA
Verp.SDFN-4(0.8x0.8)
Output Voltage1.3V
Number of Outputs1
Operating Temperature-40℃~+85℃
Supply Current (Iq)-
Output ConfigurationPositive
Operating Voltage5.5V
Output Current200mA
Output TypeFixed
FeaturesEnable control;Over Current Protection;Output discharge

Beschreibung

KI-Übersetzung

The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and an Auto-discharge function. The TCR2EN series is offered in the ultra small plastic mold package SDFN4/SDFN4E (0.8 mm×0.8 mm×0.38 mm). It has a low dropout voltage of 160 mV (2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μVrms (2.5 V output) and a load transient response of only ΔVout = ±55 mV (IOUT = 1 mA ⇔ 150 mA, Cout = 1.0 μF). As small ceramic input and output capacitors can be used with the TCR2EN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones.

Merkmale

KI-Übersetzung
  • Low Dropout voltage VDO = 160 mV (typ.) at 2.5 V-output, IOUT = 150 mA
  • VDO = 210 mV (typ.) at 1.8 V-output, IOUT = 150 mA
  • VDO = 360 mV (typ.) at 1.2 V-output, IOUT = 150 mA
  • VDO = 490 mV (typ.) at 1.0 V-output, IOUT = 150 mA
  • Low output noise voltage VNO = 35 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz
  • VNO = 30 μVrms (typ.) at 1.8 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz
  • VNO = 23 μVrms (typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz
  • VNO = 18 μVrms (typ.) at 1.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz
  • Fast load transient response (ΔVout = ±55 mV (typ.) at IOUT = 1 mA ⇔ 150 mA, Cout = 1.0 μF)
  • Low quiescent bias current IB = 35 μA (typ.) at IOUT = 0 mA
  • High ripple rejection RR = 73 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f = 1 kHz
  • Wide range Output Voltage line up (Vout = 1.0 to 3.6 V)
  • High VOUT accuracy ± 1.0% (1.8 V ≤ VOUT)
  • Overcurrent protection
  • Auto-discharge
  • Pull down connection between CONTROL and GND
  • Ceramic capacitors can be used (CIN = 0.1 μF, Cout = 1.0 μF)
  • Ultra Small package SDFN4/SDFN4E (0.8 mm×0.8 mm×0.38 mm)

Alternativteile

MPNHerstellerVerpackungVerfügbarkeitStückpreis
TCR2EN13,LFTOSHIBASDFN-4(0.8x0.8)0$ 0.2292
S-1313A13-A4T1U3ABLICHSNT-4(0808)0$ 0.3556
TCR2LN13,LF(SETOSHIBASDFN-4(0.8x0.8)0$ 0.1575
S-1333C13-A4T1U3ABLICHSNT-4(0808)0$ 1.3078