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Modelli EDAEasyEDA
ST STW10NK60Z
| Produttore | |
| Cod. Prod. | STW10NK60Z |
| Cod. LCSC | C672237 |
| Imballo | TO-247 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 600V 10A TO-247 |
| Scheda Tecnica | ST STW10NK60Z |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 156pF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 750mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 70nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 156pF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 750mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 70nC | |
| Vgs | ±30V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Caratteristiche
Traduzione AI
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected
Applicazioni
Traduzione AI
- Switching applications
Disponibile: 20
20 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 4.0844 | $ 4.08 |
| 10+ | $ 3.7529 | $ 37.53 |
| 30+ | $ 3.5466 | $ 106.40 |
| 100+ | $ 3.3354 | $ 333.54 |
| 500+ | $ 3.2395 | $ 1619.75 |
| 1,000+ | $ 3.1989 | $ 3198.90 |
Package Standard30/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 156pF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 750mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 70nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-247 | |
| Output Capacitance(Coss) | 156pF | |
| Pd - Power Dissipation | 156W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF | |
| RDS(on) | 750mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 70nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Caratteristiche
Traduzione AI
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected
Applicazioni
Traduzione AI
- Switching applications
C672237 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| FCH165N65S3R0-F155 | onsemi | TO-247-3 | 57 | $ 5.4588 | ||
| IPW60R070CFD7XKSA1 | Infineon | TO-247-3-21 | 1 | $ 14.9195 | ||
| IPW60R070CFD7 | Infineon | TO-247-3 | 130 | $ 4.6231 | ||
| FCHD190N65S3R0-F155 | onsemi | TO-247AD | 0 | $ 3.1333 | ||
| IPW65R190CFD | Infineon | TO-247 | 0 | $ 2.541 | ||
| STW13NK60Z | ST | TO-247-3 | 0 | $ 3.3094 | ||
| TPW65R170M | WUXI UNIGROUP MICRO | TO-247-3 | 0 | $ 3.0137 | ||
| VBP18R11S | VBsemi Elec | TO-247AC | 0 | $ 4.669 | ||
| VBP17R11S | VBsemi Elec | TO-247AC | 0 | $ 3.0032 | ||
| STW27NM60ND | ST | TO-247-3 | 0 | $ 14.3179 |