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EDA-ModelleEasyEDA
VBsemi Elec FDS4435A-NL-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | FDS4435A-NL-VB |
| LCSC-Nr. | C6705259 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 30V 9A SO-8 |
| Datenblatt | VBsemi Elec FDS4435A-NL-VB |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 18mΩ@10V;24mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.455nF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 18mΩ@10V;24mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.455nF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This SuperMESH3™ power MOSFET is the result of improvements to STMicroelectronics' SuperMESH™ technology, combined with a newly optimized vertical structure. The device features ultra-low on-resistance, excellent dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
Anwendungen
KI-Übersetzung
- Load Switch - Battery Switch
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3676 | $ 1.84 |
| 50+ | $ 0.2887 | $ 14.44 |
| 150+ | $ 0.2549 | $ 38.24 |
| 500+ | $ 0.2126 | $ 106.30 |
| 2,500+ | $ 0.1938 | $ 484.50 |
| 4,000+ | $ 0.1825 | $ 730.00 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 18mΩ@10V;24mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.455nF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| RDS(on) | 18mΩ@10V;24mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.455nF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This SuperMESH3™ power MOSFET is the result of improvements to STMicroelectronics' SuperMESH™ technology, combined with a newly optimized vertical structure. The device features ultra-low on-resistance, excellent dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.
Merkmale
KI-Übersetzung
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
Anwendungen
KI-Übersetzung
- Load Switch - Battery Switch
C6705259 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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| IM4435G-VB | VBsemi Elec | SO-8 | 70 | $0.3166 $0.3724 | ||
| PMK30EP,518-VB | VBsemi Elec | SO-8 | 5 | $0.3829 $0.403 | ||
| STS7PF30L-VB | VBsemi Elec | SO-8 | 90 | $0.4014 $0.4722 | ||
| SQ4435EY-T1-GE3-VB | VBsemi Elec | SO-8 | 0 | $ 0.3667 |