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VISHAY BZT52B12-G3-08
| Hersteller | |
| Herst.-Teilenr. | BZT52B12-G3-08 |
| LCSC-Nr. | C6136333 |
| Verp. | SOD-123 |
| Kundennummer | |
| Hauptmerkm. | 1 Independent 11.76V~12.24V 12V SOD-123 Single Zener Diodes RoHS |
| Datenblatt | VISHAY BZT52B12-G3-08 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | VISHAY | |
| Verp. | SOD-123 | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±2% | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | 410mW | |
| Reverse Leakage Current (Ir) | 100nA@9V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 11.76V~12.24V | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 90Ω |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | VISHAY | |
| Verp. | SOD-123 | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±2% | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 410mW | |
| Reverse Leakage Current (Ir) | 100nA@9V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 11.76V~12.24V | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 90Ω |
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Merkmale
KI-Übersetzung
- Silicon planar Zener diode
- Zener voltage graded per international E24 standard. Standard Zener voltage tolerance is ±5%, indicated by "C" in the order code. For 2% tolerance, replace "C" with "B"
- AEC-Q101 compliant versions available (part number on request)
- ESD capability per AEC-Q101: Human Body Model >8 kV, Machine Model >800 V
- Base part number - G3 denotes green, commercial grade
- IZT1 = 5 mA, IZT2 = 1 mA or 0.5 mA (1) Measured with pulse tp = 5 ms (2) Provided that the leads are kept at ambient temperature
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0932 | $ 0.09 |
| 200+ | $ 0.0372 | $ 7.44 |
| 500+ | $ 0.036 | $ 18.00 |
| 1,000+ | $ 0.0354 | $ 35.40 |
Standardgehäuse15000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | VISHAY | |
| Verp. | SOD-123 | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±2% | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | 410mW | |
| Reverse Leakage Current (Ir) | 100nA@9V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 11.76V~12.24V | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 90Ω |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | VISHAY | |
| Verp. | SOD-123 | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±2% | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 410mW | |
| Reverse Leakage Current (Ir) | 100nA@9V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 11.76V~12.24V | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 90Ω |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Silicon planar Zener diode
- Zener voltage graded per international E24 standard. Standard Zener voltage tolerance is ±5%, indicated by "C" in the order code. For 2% tolerance, replace "C" with "B"
- AEC-Q101 compliant versions available (part number on request)
- ESD capability per AEC-Q101: Human Body Model >8 kV, Machine Model >800 V
- Base part number - G3 denotes green, commercial grade
- IZT1 = 5 mA, IZT2 = 1 mA or 0.5 mA (1) Measured with pulse tp = 5 ms (2) Provided that the leads are kept at ambient temperature
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| BZT52-B12_R1_00001 | PANJIT | SOD-123 | 4,360 | $ 0.033 | ||
| BZT52B12-E3-08 | VISHAY | SOD-123 | 2,715 | $ 0.0698 | ||
| BZT52-C12_R1_00001 | PANJIT | SOD-123 | 3,220 | $ 0.0368 | ||
| BZT52B12 | LGE | SOD-123 | 12,180 | $ 0.0236 | ||
| MM1Z12BW | YFW | SOD-123 | 6,000 | $0.0212 $0.0223 | ||
| MM1Z12BW | JSMSEMI | SOD-123W | 1,300 | $0.0167 $0.0175 | ||
| BZT52B12 | Shikues | SOD-123 | 250 | $0.0155 $0.0163 | ||
| BZT52B12-G3-18 | VISHAY | SOD-123 | 0 | $ 0.0932 | ||
| BZT52B12HE3-TP | MCC | SOD-123 | 0 | $ 0.0506 | ||
| BZT52B12-G | Taiwan Semiconductor | SOD-123 | 0 | $ 0.0784 | ||
| BZT52B12-G RHG | Taiwan Semiconductor | SOD-123 | 0 | $ 0.0481 | ||
| BZT52B12-HE3_A-08 | VISHAY | SOD-123 | 0 | $ 0.1135 | ||
| BZT52B12-HE3_A-18 | VISHAY | SOD-123 | 0 | $ 0.1153 | ||
| BZT52-B12-AU_R1_000A1 | PANJIT | SOD-123 | 0 | $ 0.0264 | ||
| BZT52B12-TP | MCC | SOD-123 | 0 | $ 0.0365 | ||
| BZT52B12-E3-18 | VISHAY | SOD-123 | 0 | $ 0.2011 | ||
| BZT52-C12-AU_R1_000A1 | PANJIT | SOD-123 | 0 | $ 0.0236 | ||
| BZT52B12-HF | Comchip | SOD-123 | 0 | $ 0.0629 | ||
| MM1Z12BW | Jingdao Microelectronics | SOD-123W | 0 | $ 0.0126 | ||
| MMSZ5242B H2-TD | TDSEMIC | SOD-123 | 0 | $ 0.0285 |