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micron MT29F64G08AECABH1-10ITZ:A TR product image
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micron MT29F64G08AECABH1-10ITZ:A TR

Produttore
micron
Cod. Prod.
MT29F64G08AECABH1-10ITZ:A TR
Cod. LCSC
C6105751
Imballo
VBGA-100(12x18)
Numero Cliente
Attr. chiave
64Gbit 2.7V~3.6V 100MHz Parallel VBGA-100(12x18) Memory RoHS
Scheda Tecnicamicron MT29F64G08AECABH1-10ITZ:A TR
Conformità RoHS1 documenti disponibili
Parti alternative9
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 105.1098$ 105.11
200+$ 41.9401$ 8388.02
500+$ 40.5386$ 20269.30
1,000+$ 39.8465$ 39846.50
Package Standard1000/Full Reel
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
Produttoremicron
ImballoVBGA-100(12x18)
Operating Temperature-40℃~+85℃
FeaturesRead buffer function;Copy back write function;Software reset function;Hardware write protection function;OTP region write protection and lock function
Memory Size64Gbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles60,000 Cycles
Clock Frequency100MHz
Data Retention - TDR (Year)-
Block Erase Time(tBE)1.5ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)350us
Standby Supply Current-
InterfaceParallel
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Caratteristiche

Traduzione AI
  • Compliant with Open NAND Flash Interface v2.2 specification
  • Single-level cell technology
  • Organization: x8-bit wide, page size 8640 bytes; block size 128 pages; plane size 2048 blocks per plane; device density: 4096 blocks for 32Gb, 8192 blocks for 64Gb, 16384 blocks for 128Gb, 32768 blocks for 256Gb
  • Synchronous I/O performance: up to synchronous timing mode 5; clock frequency: 10 ns; read/write throughput per pin: 200 MT/s
  • Asynchronous I/O performance: up to asynchronous timing mode 5; minimum read/write cycle time: 20 ns; read/write throughput per pin: 50 MT/s
  • Array performance: maximum page read time 35 µs; typical page program time 350 µs; typical block erase time 1.5 ms
  • Operating voltage range: VCC 2.7~3.6V; VCCQ 1.7~1.95V or 2.7~3.6V
  • Command set: compliant with Open NAND Flash Interface NAND flash protocol
  • Advanced command set: supports program cache, sequential read cache, random read cache, OTP mode, multi-plane operations, multi-LUN operations, read ID, and copyback operations
  • First block valid at factory shipment
  • Reset command required upon power-up
  • Status byte provides software methods for detecting operation completion, pass/fail conditions, and write-protect status
  • Data strobe provides hardware synchronization for data signals in synchronous interface
  • Copyback operations supported within the same plane as the read data
  • Quality and reliability: data retention per JESD47G; endurance 60,000 program/erase cycles
  • Operating temperature: commercial grade 0℃ to +70℃; industrial grade -40℃ to +85℃
  • Package options: 52-pad LGA, 48-pin TSOP, 100-ball BGA, 132-ball BGA

Parti alternative

MPNProduttoreImballaggioDisponibilitàPrezzo unitario
MT29F64G08CBCBBH1-10:B TRmicronVBGA-100(12x18)0$ 28.9778
MT29F64G08AKCCBH2-10Z:CmicronTBGA-100(12x18)0$ 181.6246
MT29F64G08AECABH1-10Z:A TRmicronVBGA-100(12x18)0$ 115.7339
MT29F64G08CBCBBH1-10X:B TRmicronVBGA-100(12x18)0$ 25.454
MT29F64G08CECCBH1-12Z:CmicronVBGA-100(12x18)0$ 35.3773
MT29F64G08AKCBBH2-12:B TRmicronTBGA-100(12x18)0$ 203.1458
MT29F64G08CBCABH1-12ITZ:A TRmicronVBGA-100(12x18)0$ 26.7707
MT29F64G08AMCBBH2-12:B TRmicronTBGA-100(12x18)0$ 203.1458
MT29F64G08CECCBH1-12Z:C TRmicronVBGA-100(12x18)0$ 31.8406