MICROCHIP MNSKC2N2222A
| Hersteller | |
| Herst.-Teilenr. | MNSKC2N2222A |
| LCSC-Nr. | C6096876 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 50V 325 800mA NPN 1 NPN Single Bipolar Transistors |
| Datenblatt | MICROCHIP MNSKC2N2222A |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Operating Temperature | -65℃~+200℃ | |
| Current - Collector Cutoff | 10nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 325 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 800mA | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 300mV;1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Operating Temperature | -65℃~+200℃ | |
| Current - Collector Cutoff | 10nA | |
| Collector - Emitter Voltage VCEO | 50V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 325 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 800mA | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 300mV;1V |
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Merkmale
KI-Übersetzung
- ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255
- AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
- GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
- LOW VCE(sat): .3V @ IC = 150 mAADC
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 22.2583 | $ 22.26 |
| 200+ | $ 8.8812 | $ 1776.24 |
| 500+ | $ 8.5857 | $ 4292.85 |
| 1,000+ | $ 8.4387 | $ 8438.70 |
Standardgehäuse100/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Operating Temperature | -65℃~+200℃ | |
| Current - Collector Cutoff | 10nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 325 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 800mA | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 300mV;1V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | MICROCHIP | |
| Verp. | - | |
| Operating Temperature | -65℃~+200℃ | |
| Current - Collector Cutoff | 10nA | |
| Collector - Emitter Voltage VCEO | 50V |
| Typ | Beschreibung | |
|---|---|---|
| DC Current Gain | 325 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 800mA | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 300mV;1V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255
- AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
- GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
- LOW VCE(sat): .3V @ IC = 150 mAADC
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

