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Modelli EDAEasyEDA
ST STP90NF03L
| Produttore | |
| Cod. Prod. | STP90NF03L |
| Cod. LCSC | C60612 |
| Imballo | TO-220 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 30V 90A TO-220 |
| Scheda Tecnica | ST STP90NF03L |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 860pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 860pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This application specific Power Mosfet is the third generation of unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Caratteristiche
Traduzione AI
- Optimal RDS(on)×Qg trade-off
- Conduction losses reduced
- Switching losses reduced
Applicazioni
Traduzione AI
- Switching application
Disponibile: 185
185 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.9751 | $ 0.98 |
| 10+ | $ 0.8162 | $ 8.16 |
| 50+ | $ 0.7293 | $ 36.47 |
| 100+ | $ 0.6294 | $ 62.94 |
| 500+ | $ 0.5867 | $ 293.35 |
| 1,000+ | $ 0.5671 | $ 567.10 |
Package Standard50/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 860pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 860pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This application specific Power Mosfet is the third generation of unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Caratteristiche
Traduzione AI
- Optimal RDS(on)×Qg trade-off
- Conduction losses reduced
- Switching losses reduced
Applicazioni
Traduzione AI
- Switching application
C60612 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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