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onsemi NTHLD040N65S3HF

Hersteller
Herst.-Teilenr.
NTHLD040N65S3HF
LCSC-Nr.
C604409
Verp.
TO-247-3
Kundennummer
Hauptmerkm.
446W 650V 65A 5V 40mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS
Datenblattonsemi NTHLD040N65S3HF
RoHS-Konformität3 Dokumente verfügbar
Derzeit nicht verfügbar
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Herstelleronsemi
Verp.TO-247-3
Output Capacitance(Coss)135pF
Pd - Power Dissipation446W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)65A
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.945nF
Gate Charge(Qg)159nC@10V
Vgs±30V
TypeN-Channel

Beschreibung

KI-Übersetzung

SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems demanding miniaturization and higher efficiency. The SUPERFET III FRFET MOSFET features an optimized body diode reverse recovery performance, eliminating the need for additional components and improving system reliability.

Merkmale

KI-Übersetzung
  • 700 V @ TJ = 150°C
  • Typical RDS(on) = 32 mΩ
  • Ultra-low gate charge (typical Qg = 159 nC)
  • Low effective output capacitance (typical Coss(eff.) = 1367 pF)
  • 100% avalanche tested
  • These devices are lead-free, halogen-free/bromine-free flame retardant, and RoHS compliant

Anwendungen

KI-Übersetzung
  • Telecom/server power supplies
  • Industrial power supplies
  • EV chargers
  • UPS/solar