onsemi NTHLD040N65S3HF
| Hersteller | |
| Herst.-Teilenr. | NTHLD040N65S3HF |
| LCSC-Nr. | C604409 |
| Verp. | TO-247-3 |
| Kundennummer | |
| Hauptmerkm. | 446W 650V 65A 5V 40mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NTHLD040N65S3HF |
| RoHS-Konformität | 3 Dokumente verfügbar |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 135pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.945nF | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 135pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.945nF | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Beschreibung
SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems demanding miniaturization and higher efficiency. The SUPERFET III FRFET MOSFET features an optimized body diode reverse recovery performance, eliminating the need for additional components and improving system reliability.
Merkmale
- 700 V @ TJ = 150°C
- Typical RDS(on) = 32 mΩ
- Ultra-low gate charge (typical Qg = 159 nC)
- Low effective output capacitance (typical Coss(eff.) = 1367 pF)
- 100% avalanche tested
- These devices are lead-free, halogen-free/bromine-free flame retardant, and RoHS compliant
Anwendungen
- Telecom/server power supplies
- Industrial power supplies
- EV chargers
- UPS/solar
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 135pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.945nF | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 135pF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 65A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.945nF | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Beschreibung
SUPERFET III MOSFET is a new high-voltage super-junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems demanding miniaturization and higher efficiency. The SUPERFET III FRFET MOSFET features an optimized body diode reverse recovery performance, eliminating the need for additional components and improving system reliability.
Merkmale
- 700 V @ TJ = 150°C
- Typical RDS(on) = 32 mΩ
- Ultra-low gate charge (typical Qg = 159 nC)
- Low effective output capacitance (typical Coss(eff.) = 1367 pF)
- 100% avalanche tested
- These devices are lead-free, halogen-free/bromine-free flame retardant, and RoHS compliant
Anwendungen
- Telecom/server power supplies
- Industrial power supplies
- EV chargers
- UPS/solar
C604409 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

