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EDA-ModelleEasyEDA
Infineon S25HL512TDPMHV013
| Hersteller | |
| Herst.-Teilenr. | S25HL512TDPMHV013 |
| LCSC-Nr. | C5880862 |
| Verp. | SOIC-16-300mil |
| Kundennummer | |
| Hauptmerkm. | 512Mbit 2.7V~3.6V 166MHz SPI SOIC-16-300mil Memory RoHS |
| Datenblatt | Infineon S25HL512TDPMHV013 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
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Merkmale
KI-Übersetzung
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 15.9596 | $ 15.96 |
| 200+ | $ 6.3681 | $ 1273.62 |
| 500+ | $ 6.1551 | $ 3077.55 |
| 1,450+ | $ 6.0501 | $ 8772.65 |
Standardgehäuse1450/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | Infineon | |
| Verp. | SOIC-16-300mil | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 0.014mA | |
| Interface | SPI |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
C5880862 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| S25HL512TFAMHB010 | Infineon/CYPRESS | SOIC-16-300mil | 10 | $ 20.8332 | ||
| IS25LP512MG-RMLE-TR | ISSI | SOIC-16-300mil | 7 | $ 12.8301 | ||
| S25HL512TDPMHB010 | Infineon | SOIC-16-300mil | 0 | $ 15.1717 | ||
| S25HL512TDPMHV010 | Infineon | SOIC-16-300mil | 0 | $ 17.051 | ||
| S25HL512TDPMHB013 | Infineon | SOIC-16-300mil | 0 | $ 17.9186 | ||
| S25HL512TFAMHV010 | Infineon | SOIC-16-300mil | 0 | $ 17.8611 | ||
| S25HL512TFAMHV013 | Infineon | SOIC-16-300mil | 0 | $ 16.716 | ||
| S25HL512TFAMHB013 | Infineon | SOIC-16-300mil | 0 | $ 18.7955 | ||
| IS25LP512MG-RMLE-TY | ISSI | SOIC-16-300mil | 0 | $ 9.1268 | ||
| MX25L51245GMI-08G | MXIC | SOP-16-300mil | 0 | $ 17.0666 |