LCSC Electronics logoLCSC Electronics svg logo
Zaloguj
USD
Qorvo UF4C120070K4S product image
Zdjęcia poglądowe

Qorvo UF4C120070K4S

Producent
Nr części prod.
UF4C120070K4S
Nr LCSC
C5814907
Opak.
-
Numer Klienta
Klucz. cechy
1.2kV 27.5A 4.8V 217W 91mΩ@12V 1 N-channel Single FETs, MOSFETs RoHS
Karta KatalogowaQorvo UF4C120070K4S
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.(Tylko do wglądu)Suma całkowita
1+$ 21.8466$ 21.85
210+$ 8.7168$ 1830.53
510+$ 8.4262$ 4297.36
990+$ 8.2817$ 8198.88
Standardowa Obudowa30/Full Tube
Lepsza cena za większą ilość?
$

Specyfikacje Produktu

Wszystko
TypOpis
KategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProducentQorvo
Opak.-
Operating Temperature-55℃~+175℃
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)27.5A
Gate Threshold Voltage (Vgs(th))4.8V
Pd - Power Dissipation217W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)91mΩ@12V
Number1 N-channel
Input Capacitance(Ciss)1.37nF
Gate Charge(Qg)37.8nC@15V

Opis

Tłumaczenie AI

The UF4C120070K4S is a 1200V, 72mΩ G4 SiC FET. Based on a unique cascode circuit configuration, it co-packages a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-247-4L package, it offers ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Funkcje

Tłumaczenie AI
  • On-resistance RDS(on): 72mΩ (typical)
  • Operating temperature: 175℃ (maximum)
  • Excellent reverse recovery: Qrr = 119 nC
  • Low body diode VFSD: 1.43V
  • Low gate charge: QG = 37.8 nC
  • Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
  • Low intrinsic capacitance
  • ESD protection: HBM Class 2 and CDM Class C3
  • TO-247-4L package for faster switching speed and clean gate waveform

Zastosowania

Tłumaczenie AI
  • Electric vehicle charging
  • Photovoltaic inverters
  • Switch-mode power supplies
  • Power factor correction modules
  • Motor drives
  • Induction heating