Qorvo UF4C120070K4S
| Producent | |
| Nr części prod. | UF4C120070K4S |
| Nr LCSC | C5814907 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 1.2kV 27.5A 4.8V 217W 91mΩ@12V 1 N-channel Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Qorvo UF4C120070K4S |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Pd - Power Dissipation | 217W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 91mΩ@12V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 37.8nC@15V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 217W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 91mΩ@12V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 37.8nC@15V |
Opis
The UF4C120070K4S is a 1200V, 72mΩ G4 SiC FET. Based on a unique cascode circuit configuration, it co-packages a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-247-4L package, it offers ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Funkcje
- On-resistance RDS(on): 72mΩ (typical)
- Operating temperature: 175℃ (maximum)
- Excellent reverse recovery: Qrr = 119 nC
- Low body diode VFSD: 1.43V
- Low gate charge: QG = 37.8 nC
- Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
- Low intrinsic capacitance
- ESD protection: HBM Class 2 and CDM Class C3
- TO-247-4L package for faster switching speed and clean gate waveform
Zastosowania
- Electric vehicle charging
- Photovoltaic inverters
- Switch-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 21.8466 | $ 21.85 |
| 210+ | $ 8.7168 | $ 1830.53 |
| 510+ | $ 8.4262 | $ 4297.36 |
| 990+ | $ 8.2817 | $ 8198.88 |
Standardowa Obudowa30/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V | |
| Pd - Power Dissipation | 217W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 91mΩ@12V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 37.8nC@15V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 27.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.8V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 217W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 91mΩ@12V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | 37.8nC@15V |
Opis
The UF4C120070K4S is a 1200V, 72mΩ G4 SiC FET. Based on a unique cascode circuit configuration, it co-packages a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-247-4L package, it offers ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Funkcje
- On-resistance RDS(on): 72mΩ (typical)
- Operating temperature: 175℃ (maximum)
- Excellent reverse recovery: Qrr = 119 nC
- Low body diode VFSD: 1.43V
- Low gate charge: QG = 37.8 nC
- Threshold voltage VG(th): 4.8V (typical), supports 0 to 15V drive
- Low intrinsic capacitance
- ESD protection: HBM Class 2 and CDM Class C3
- TO-247-4L package for faster switching speed and clean gate waveform
Zastosowania
- Electric vehicle charging
- Photovoltaic inverters
- Switch-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

