Infineon/CYPRESS CY15B108QSN-108BKXI

The EXCELON™ Ultra CY15x108QSN is a high-performance, 8-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories.

Unlike serial flash, the CY15x108QSN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. The CY15x108QSN is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the CY15x108QSN ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash can cause data loss.

The CY15x108QSN combines a 8-Mbit F-RAM with the high-speed quad SPI (QPI) SDR and DDR interfaces which enhances the non-volatile write capability of F-RAM technology. The device incorporates a read-only device ID and unique ID features which allow the SPI bus master to determine the manufacturer, product density, product revision and unique ID for each part. The device is also offered with a unique serial number that is read-only and can be used to identify a board or a system.

The device supports on-die ECC logic which can detect and correct 2-bit error in every 8-byte unit data. The device also extends capability to report 3-bit error in 8-byte unit data. The CY15x108QSN also supports the cyclic redundancy check (CRC) feature which can be used to check the data integrity of the stored data in the memory array.

• 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K x 8
• Virtually unlimited endurance of 100 trillion (10^14) read/write cycles
• 151-year data retention
• Infineon instant non-volatile write technology
• Advanced high-reliability ferroelectric process
• Single and multi I/O serial peripheral interface (SPI)
• Serial bus interface SPI protocols
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
• Supports SPI mode 0 (0, 0) for all DDR mode transfers
• Extended I/O SPI protocols
• Dual SPI (DPI) protocols
• Quad SPI (QPI) protocols
• SPI clock frequency: Up to 108-MHz frequency SPI single data rate (SDR)
• SPI clock frequency: Up to 46-MHz frequency SPI double data rate (DDR)
• eXecute-In-Place (XIP) for memory read/write
• Write protection, data security, and data integrity
• Hardware protection using the write protect (WP) pin
• Software block protection
• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
• ECC detects and corrects 2-bit error. If a 3-bit error occurs, it does not correct but reports through the ECC Status Register
• CRC detects any accidental change to raw data
• Extended electronic signatures
• Device ID includes manufacturer ID and product ID
• Unique ID
• User programmable serial number
• Dedicated 256-byte special sector F-RAM
• Dedicated special sector write and read
• Content can survive up to three standard reflow cycles
• Low-power consumption at high speed
• 12 mA (typ) active current for 108 MHz SPI SDR
• 20 mA (typ) active current for 108 MHz QSPI SDR
• 15.5 mA (typ) active current for 46 MHz QSPI DDR
• 105 μA (typ) standby current
• 0.9 μA (typ) deep power down mode current
• 0.1 μA (typ) hibernate mode current
• Low-voltage operation: CY15V108QSN: VDD = 1.71 V to 1.89 V
• Low-voltage operation: CY15B108QSN: VDD = 1.8 V to 3.6 V
• Operating temperature: -40 ℃ to +85 ℃
• Packages: 24-ball fine pitch ball grid array (FBGA)
• Restriction of hazardous substances (RoHS) compliant