ISSI IS61WV51216EEALL-20TLI

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED: Single Error Correcting-Double Error Detecting) yield high-performance and highly reliable devices. When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. A data byte allows Upper Byte (UB#) and Lower Byte (LB#) access. The devices are packaged in the JEDEC standard 44-pin TSOP (TYPE II), 48-pin mini BGA (6mm x 8mm), 48-pin TSOP (TYPE I), and 54-pin TSOP (TYPE II)

• High-speed access time: 8ns, 10ns, 20ns
• Single power supply 1.65V - 2.2V VDD (IS61WV51216EEALL) 2.4V - 3.6V VDD (IS61/64WV51216EEBLL)
• Error Detection and Correction with optional ERR1/ERR2 output pin: ERR1 pin indicates 1-bit error detection and correction. ERR2 pin indicates 2-bit error detection
• Package Available: 44-pin TSOP (Type II) 48-pin TSOP (Type I) 48-ball mini BGA (6mm x 8mm) 54 pin TSOP (Type II)
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available