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EDA-ModelleEasyEDA
DIODES DMPH6250S-7
| Hersteller | |
| Herst.-Teilenr. | DMPH6250S-7 |
| LCSC-Nr. | C5624166 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 60V 2.4A SOT-23 |
| Datenblatt | DIODES DMPH6250S-7 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 31.3pF | |
| Pd - Power Dissipation | 920mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2.4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.2pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 512pF | |
| Gate Charge(Qg) | 8.3nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 31.3pF | |
| Pd - Power Dissipation | 920mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2.4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.2pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 512pF | |
| Gate Charge(Qg) | 8.3nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
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Beschreibung
KI-Übersetzung
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Merkmale
KI-Übersetzung
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability
Anwendungen
KI-Übersetzung
- Battery charging
- Power-management functions
- DC-DC converters
- Load switches
Vorrätig: 161
161 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.2947 | $ 1.29 |
| 10+ | $ 1.0964 | $ 10.96 |
| 30+ | $ 0.9981 | $ 29.94 |
| 100+ | $ 0.9014 | $ 90.14 |
| 500+ | $ 0.8424 | $ 421.20 |
| 1,000+ | $ 0.8113 | $ 811.30 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 31.3pF | |
| Pd - Power Dissipation | 920mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2.4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.2pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 512pF | |
| Gate Charge(Qg) | 8.3nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SOT-23 | |
| Output Capacitance(Coss) | 31.3pF | |
| Pd - Power Dissipation | 920mW | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2.4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.2pF | |
| RDS(on) | 155mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 512pF | |
| Gate Charge(Qg) | 8.3nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Merkmale
KI-Übersetzung
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability
Anwendungen
KI-Übersetzung
- Battery charging
- Power-management functions
- DC-DC converters
- Load switches
C5624166 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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