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EDA-ModelleEasyEDA
VBsemi Elec P0603BVG-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | P0603BVG-VB |
| LCSC-Nr. | C558223 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 13A SO-8 |
| Datenblatt | VBsemi Elec P0603BVG-VB |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;3V | |
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Anwendungen
KI-Übersetzung
- Laptop CPU core
- High-end switching
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3196$ 0.2717 | $ 1.36 |
| 50+ | $ 0.2484$ 0.2112 | $ 10.56 |
| 150+ | $ 0.2179$ 0.1853 | $ 27.80 |
| 500+ | $ 0.1798$ 0.1529 | $ 76.45 |
| 2,500+ | $ 0.1628$ 0.1384 | $ 346.00 |
| 4,000+ | $ 0.1527$ 0.1298 | $ 519.20 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;3V | |
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 1V;3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Anwendungen
KI-Übersetzung
- Laptop CPU core
- High-end switching
C558223 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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| IRF7475TRPBF-VB | VBsemi Elec | SO-8 | 100 | $0.3721 $0.4377 | ||
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| FDS6670AS-VB | VBsemi Elec | SO-8 | 1 | $0.3937 $0.4144 | ||
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