실제 제품과 다를 수 있음
EDA 모델EasyEDA
Nexperia PUMH2F
| 제조업체 | |
| 제조사 품번 | PUMH2F |
| LCSC 번호 | C553537 |
| 포장 | TSSOP-6-1.3mm |
| 고객 번호 | |
| 주요 제원 | 80 300mW 100mA 50V 2 NPN (Pre-Biased) TSSOP-6-1.3mm Bipolar Transistor Arrays, Pre-Biased RoHS |
| 데이터시트 | Nexperia PUMH2F |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 10 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | Nexperia | |
| 포장 | TSSOP-6-1.3mm | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV@10mA,0.5mA | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.6V | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | Nexperia | |
| 포장 | TSSOP-6-1.3mm | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV@10mA,0.5mA | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| 타입 | 설명 | |
|---|---|---|
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.6V | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package. NPN/PNP complement: PUMD12 PNP/PNP complement: PUMB2
주요 특징
AI 번역
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
응용 분야
AI 번역
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 0.0314 | $ 0.03 |
| 10+ | $ 0.0246 | $ 0.25 |
| 30+ | $ 0.0208 | $ 0.62 |
| 100+ | $ 0.0186 | $ 1.86 |
| 500+ | $ 0.0166 | $ 8.30 |
| 1,000+ | $ 0.0155 | $ 15.50 |
표준 패키지10000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | Nexperia | |
| 포장 | TSSOP-6-1.3mm | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV@10mA,0.5mA | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.6V | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| 제조업체 | Nexperia | |
| 포장 | TSSOP-6-1.3mm | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV@10mA,0.5mA | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| 타입 | 설명 | |
|---|---|---|
| Input Resistor | 47kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.6V | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package. NPN/PNP complement: PUMD12 PNP/PNP complement: PUMB2
주요 특징
AI 번역
- 100 mA output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces component count
- Reduces pick and place costs
응용 분야
AI 번역
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
C553537 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| PUMH20,115 | Nexperia | SOT-363 | 2,710 | $ 0.0533 | ||
| PUMH11F | Nexperia | SOT-363 | 200 | $ 0.2328 | ||
| MUN5213DW1T1G | onsemi | SOT-363 | 250 | $ 0.0528 | ||
| PUMH18,115 | Nexperia | SOT-363 | 1,760 | $ 0.1487 | ||
| ADC144EUQ-13 | DIODES | SOT-363 | 1,130 | $ 0.0843 | ||
| MUN5230DW1T1G | onsemi | SOT-363 | 5 | $ 0.3187 | ||
| ADC114YUQ-7 | DIODES | SOT-363 | 15 | $ 0.0862 | ||
| ADC114YUQ-13 | DIODES | SOT-363 | 590 | $ 0.0686 | ||
| SMUN5230DW1T1G | onsemi | SOT-363 | 0 | $ 0.1211 | ||
| PUMH9,125 | Nexperia | TSSOP-6 | 0 | $ 0.1716 |