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EDA-ModelleEasyEDA
Nexperia BC869-16,115
| Hersteller | |
| Herst.-Teilenr. | BC869-16,115 |
| LCSC-Nr. | C549550 |
| Verp. | SOT-89 |
| Kundennummer | |
| Hauptmerkm. | TRANS PNP 20V 2A SOT-89 |
| Datenblatt | Nexperia BC869-16,115 |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 2A | |
| Pd - Power Dissipation | 1.35W | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 2A | |
| Pd - Power Dissipation | 1.35W | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
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Beschreibung
KI-Übersetzung
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Merkmale
KI-Übersetzung
- High current
- Three current gain selections
- High power dissipation capability
- Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
- Leadless very small SMD plastic package with medium power capability (SOT1061)
- AEC-Q101 qualified
Anwendungen
KI-Übersetzung
- Linear voltage regulators
- Power management
- High-side switches
- MOSFET drivers
- Battery-driven devices
- Amplifiers
Vorrätig: 17
17 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0252 | $ 1.03 |
| 10+ | $ 0.8569 | $ 8.57 |
| 30+ | $ 0.7651 | $ 22.95 |
| 100+ | $ 0.661 | $ 66.10 |
| 500+ | $ 0.6136 | $ 306.80 |
| 1,000+ | $ 0.5937 | $ 593.70 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 2A | |
| Pd - Power Dissipation | 1.35W | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Nexperia | |
| Verp. | SOT-89 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 10uA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V |
| Typ | Beschreibung | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Current - Collector(Ic) | 2A | |
| Pd - Power Dissipation | 1.35W | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Merkmale
KI-Übersetzung
- High current
- Three current gain selections
- High power dissipation capability
- Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
- Leadless very small SMD plastic package with medium power capability (SOT1061)
- AEC-Q101 qualified
Anwendungen
KI-Übersetzung
- Linear voltage regulators
- Power management
- High-side switches
- MOSFET drivers
- Battery-driven devices
- Amplifiers
C549550 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| BC869,115 | Nexperia | SOT-89 | 20 | $ 0.1741 | ||
| WPT2E33-3/TR | WILLSEMI | SOT-89-3L | 10 | $ 0.0947 | ||
| JTDB772 | JTD | SOT-89-3L | 930 | $ 0.0452 | ||
| 2SA1417S-TD-E | onsemi | SOT-89-3 | 1 | $ 0.4566 | ||
| 2SB772-E | Cmos | SOT-89 | 180 | $0.0903 $0.095 | ||
| DXT751-13 | DIODES | SOT-89-3L | 95 | $ 0.3174 | ||
| ZXTP2012ZQTA | DIODES | SOT-89 | 0 | $ 1.1501 | ||
| PBSS306PX,115 | Nexperia | SOT-89 | 0 | $ 0.6629 | ||
| 2SA1417T-TD-E | onsemi | SOT-89 | 0 | $ 0.5537 | ||
| PPT89T30V5AE2M | Shanghai Prisemi Elec | SOT-89-3L | 0 | $ 0.0985 |